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FQPF13N50CT

Description
MOSFET N-CH/500V/13A QFET C-Series
Categorysemiconductor    Discrete semiconductor   
File Size1MB,10 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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FQPF13N50CT Overview

MOSFET N-CH/500V/13A QFET C-Series

FQPF13N50CT Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerON Semiconductor
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage500 V
Id - Continuous Drain Current13 A
Rds On - Drain-Source Resistance390 mOhms
Vgs - Gate-Source Voltage30 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Pd - Power Dissipation48 W
Channel ModeEnhancement
PackagingTube
Height16.3 mm
Length10.67 mm
Transistor Type1 N-Channel
TypeMOSFET
Width4.7 mm
Forward Transconductance - Min15 S
Fall Time100 ns
Rise Time100 ns
Factory Pack Quantity1000
Typical Turn-Off Delay Time130 ns
Typical Turn-On Delay Time25 ns
Unit Weight0.080072 oz
FQP13N50C / FQPF13N50C — N-Channel QFET
®
MOSFET
FQP13N50C / FQPF13N50C
N-Channel QFET
®
MOSFET
500 V, 13 A,
480
mΩ
Description
These N-Channel enhancement mode power field effect
transistors are produced using
ON Semiconductor’s
proprietary, planar stripe,
DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Features
13
A,
500
V, R
DS(on)
=
480 mΩ
(Max.) @ V
GS
= 10 V,
I
D
=
6.5
A
• Low
Gate Charge
(Typ.
43
nC)
• Low Crss (Typ.
20
pF)
• 100% Avalanche Tested
D
G
D
S
TO-220
C
G
D
S
o
G
TO-220F
S
FQP13N50C
13
8
(Note 1)
Absolute Maximum Ratings
T
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
= 25 C unless otherwise noted.
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQPF13N50C
500
13 *
8*
52 *
±
30
860
13
19.5
4.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
52
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
195
1.56
-55 to +150
300
48
0.39
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
θJC
R
θJS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
FQP13N50C
0.64
0.5
62.5
FQPF13N50C
2.58
--
62.5
Units
°C/W
°C/W
°C/W
©2003
Semiconductor Components Industries, LLC.
September-2017,
Rev.
3
Publication Order Number:
FQP13N50C-F105/D

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Description MOSFET N-CH/500V/13A QFET C-Series MOSFET N-CH 500V 13A TO-220 Drain-source voltage (Vdss): 500V Continuous drain current (Id) (at 25°C): 13A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 480mΩ @ 6.5A, 10V Maximum power dissipation (Ta =25°C): 48W Type: N-channel
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