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BLF7G27LS-90P,112

Description
RF MOSFET Transistors PWR LDMOS TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size2MB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BLF7G27LS-90P,112 Overview

RF MOSFET Transistors PWR LDMOS TRANSISTOR

BLF7G27LS-90P,112 Parametric

Parameter NameAttribute value
Source Url Status Check Date2013-06-14 00:00:00
Brand NameNXP Semiconductor
Is it Rohs certified?conform to
Parts packaging codeDFM
Contacts4
Manufacturer packaging codeSOT1121B
Reach Compliance Codecompliant
Base Number Matches1
BLF7G27L-90P;
BLF7G27LS-90P
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
90 W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Mode of operation
IS-95
f
(MHz)
2500 to 2700
Single carrier W-CDMA 2500 to 2700
[1]
[2]
I
Dq
(mA)
720
720
V
DS
(V)
28
28
P
L(AV)
(W)
16
25
G
p
(dB)
18.5
18.5
D
29
35
ACPR
885k
ACPR
5M
(dBc)
-
36
[2]
46
[1]
-
(%) (dBc)
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is
3.84 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Designed for broadband operation (2500 MHz to 2700 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2500 MHz to 2700 MHz frequency range
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