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SM1001-M1

Description
PIN Diodes
Categorysemiconductor    Discrete semiconductor   
File Size161KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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SM1001-M1 Overview

PIN Diodes

SM1001-M1 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerMicrosemi
Product CategoryPIN Diodes
RoHSN
Maximum Diode Capacitance1.3 pF
Maximum Series Resistance @ Maximum IF350 mOhms
If - Forward Current100 mA
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Maximum Operating Frequency2 GHz
Mounting StyleSMD/SMT
Package / CaseMELF
ConfigurationSingle
TypeControl Pin Diodes Devices
Carrier Life4.5 us
Ir - Reverse Current500 nA
Factory Pack Quantity1
SM0502 – SM1003
TM
®
CONTROL DEVICES
Surface Mount – MELF PIN Diodes
RoHS Compliant Versions
DESCRIPTION
This line of ‘MELF’ high power PIN diodes are hermetically sealed
surface mount packaged devices with full face bonded chips for low
inductance construction. The MELF ceramic package has square end
terminations which are ideal for surface mount and pick and place
operations. The PIN diode chips are coated with a special hard glass
passivation which is required for high power applications and to
enhance the reliability resulting in MTBFs of greater than one million
hours.
RoHS compliant versions of these products meet RoHS requirements per EU
Directive 2002/95/EC. The standard terminal finish is gold unless otherwise
specified. Consult the factory if you have special requirements.
KEY FEATURES
Non-Magnetic
1
Versions Ideal for
MRI Applications
Very Low Inductance, Full Face
Bonding
Hi-Rel Hermetic Design
Surface Mount Devices Available
in Tape and Reel
2
RoHS Compliant Versions
www.MICROSEMI.com
Available
APPLICATIONS
The MELF diodes are used as switching, attenuating and phase
shifting elements from HF through 2 GHz and have breakdown
voltage ratings up to 500 volts. ‘Non-magnetic
1
’ .Cer-Met. (MELFs)
are also used as switching elements in MRI (magnetic resonance
imaging). Conventional Magnetic MELF packages are used in
Cellular, Beam Steering units (telephone via satellites) surface mount
applications, and Filter Switch banks for Frequency Hopping Radios.
APPLICATIONS/BENEFITS
Designed for Low Loss – Low
Distortion Applications
Switch – Filter Bank
T/R Control
Attenuators
MRI Switching
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Maximum Leakage Current
@80% of Minimum Rated V
B
Forward Current (1us Pulse)
Storage Temperature
Operating Temperature
Symbol
I
R
I
F
T
STG
T
OP
Value
500
1
-55 to +150
-55 to +150
Unit
nA
A
SM0502 – SM1003
ºC
ºC
IMPORTANT:
For the most current data, consult our website
:
www.MICROSEMI.com
Specifications are subject to change, consult factory for the latest information.
These devices are ESD sensitive and must be handled using ESD precautions.
1‘
Non Magnetic’ refers to any products that
are designed with low and ultra low
magnetic materials for use in MRI systems
RoHS versions are supplied with a matte
tin finish.
2
.
Copyright
2007
Rev: 2009-02-25
Microsemi
Microwave Products
Page 1
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748

SM1001-M1 Related Products

SM1001-M1 SM0509-M1 SM0508-M1 SMX0504-M1 SMX0508-M1 SMX0502-M1 SM0512-M1
Description PIN Diodes PIN Diodes PIN Diodes PIN Diodes PIN Diodes PIN diode PIN diode
Configuration Single SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maker - Microsemi Microsemi - Microsemi Microsemi Microsemi
Parts packaging code - MELF MELF MELF MELF MELF MELF
package instruction - HERMETIC SEALED, CERAMIC, M1, MELF-2 R-CDSO-R2 R-CDSO-R2 R-CDSO-R2 R-CDSO-R2 HERMETIC SEALED, CERAMIC, M1, MELF-2
Contacts - 2 2 2 2 2 2
Reach Compliance Code - compliant compliant compliant compliant compliant compliant
ECCN code - EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features - LOW DISTORTION LOW DISTORTION LOW DISTORTION LOW DISTORTION LOW DISTORTION LOW DISTORTION
application - ATTENUATOR; SWITCHING ATTENUATOR; SWITCHING ATTENUATOR; SWITCHING ATTENUATOR; SWITCHING ATTENUATOR; SWITCHING ATTENUATOR; SWITCHING
Minimum breakdown voltage - 500 V 500 V 500 V 500 V 500 V 500 V
Maximum diode capacitance - 1.2 pF 0.9 pF 0.6 pF 0.9 pF 0.5 pF 1.5 pF
Nominal diode capacitance - 1.2 pF 0.9 pF 0.6 pF 0.9 pF 0.5 pF 1.5 pF
Diode component materials - SILICON SILICON SILICON SILICON SILICON SILICON
Maximum diode forward resistance - 0.35 Ω 0.4 Ω 0.6 Ω 0.4 Ω 0.7 Ω 0.25 Ω
Diode resistance test current - 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA
Diode resistance test frequency - 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz
Diode type - PIN DIODE PIN DIODE PIN DIODE PIN DIODE PIN DIODE PIN DIODE
frequency band - HIGH FREQUENCY TO L BAND HIGH FREQUENCY TO L BAND HIGH FREQUENCY TO L BAND HIGH FREQUENCY TO L BAND HIGH FREQUENCY TO L BAND HIGH FREQUENCY TO L BAND
JESD-30 code - R-CDSO-R2 R-CDSO-R2 R-CDSO-R2 R-CDSO-R2 R-CDSO-R2 R-CDSO-R2
Minority carrier nominal lifetime - 2.5 µs 2 µs 1.5 µs 2 µs 1 µs 3.5 µs
Number of components - 1 1 1 1 1 1
Number of terminals - 2 2 2 2 2 2
Maximum operating temperature - 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material - CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Certification status - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Reverse test voltage - 50 V 50 V 50 V 50 V 50 V 50 V
surface mount - YES YES YES YES YES YES
technology - POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE
Terminal form - WRAP AROUND WRAP AROUND WRAP AROUND WRAP AROUND WRAP AROUND WRAP AROUND
Terminal location - DUAL DUAL DUAL DUAL DUAL DUAL
Base Number Matches - - 1 1 1 1 -
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