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BLP10H610Z

Description
RF MOSFET Transistors Broadband LDMOS driver transistor
Categorysemiconductor    Discrete semiconductor   
File Size851KB,11 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BLP10H610Z Overview

RF MOSFET Transistors Broadband LDMOS driver transistor

BLP10H610Z Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryRF MOSFET Transistors
RoHSDetails
TechnologySi
PackagingCut Tape
PackagingReel
Moisture SensitiveYes
Factory Pack Quantity500
BLP10H610
Broadband LDMOS driver transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
A 10 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at
frequencies from HF to 1400 MHz.
Table 1.
Application performance
f
(MHz)
CW
27
40
60
80
88 to 108
400 to 450
950 to 1225
Pulsed RF
[1]
DVB-T
[1]
t
p
= 100
s; 
= 10 %.
Test signal
V
DS
(V)
50
50
50
50
50
50
50
50
45
50
P
L
(W)
10
20
19
19
16
>14
>13
10
11
1
G
p
(dB)
26.7
25
24
25
25
>25.5
>16
22
>14
>21
D
(%)
46
65
65
67
62
>62
>42
60
-
-
860
1190 to 1410
860
1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 1400 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications
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