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5962-3829409MZA

Description
SRAM 64K Asynchronous 8K x 8 SRAM
Categorystorage    storage   
File Size632KB,11 Pages
ManufacturerIDT (Integrated Device Technology)
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5962-3829409MZA Overview

SRAM 64K Asynchronous 8K x 8 SRAM

5962-3829409MZA Parametric

Parameter NameAttribute value
Brand NameIntegrated Device Technology
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeCDIP
package instructionDIP, DIP28,.3
Contacts28
Manufacturer packaging codeSD28
Reach Compliance Codenot_compliant
ECCN code3A001.A.2.C
Maximum access time55 ns
I/O typeCOMMON
JESD-30 codeR-GDIP-T28
JESD-609 codee0
length37.1475 mm
memory density65536 bit
Memory IC TypeSTANDARD SRAM
memory width8
Humidity sensitivity level1
Number of functions1
Number of ports1
Number of terminals28
word count8192 words
character code8000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize8KX8
Output characteristics3-STATE
ExportableYES
Package body materialCERAMIC, GLASS-SEALED
encapsulated codeDIP
Encapsulate equivalent codeDIP28,.3
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)240
power supply5 V
Certification statusQualified
Filter levelMIL-STD-883
Maximum seat height5.08 mm
Maximum standby current0.02 A
Minimum standby current4.5 V
Maximum slew rate0.125 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperature20
width7.62 mm
Base Number Matches1
CMOS Static RAM
64K (8K x 8-Bit)
Features
Description
IDT7164S
IDT7164L
High-speed address/chip select access time
– Military: 20/25/35/45/55/70/85/100ns (max.)
– Industrial: 20/25ns (max.)
– Commercial: 20/25ns (max.)
Low power consumption
Battery backup operation – 2V data retention voltage
(L Version only)
Produced with advanced CMOS high-performance
technology
Inputs and outputs directly TTL-compatible
Three-state outputs
Available in 28-pin DIP, CERDIP and SOJ
Military product compliant to MIL-STD-883, Class B
Green parts available, see ordering information
The IDT7164 is a 65,536 bit high-speed static RAM organized as 8K
x 8. It is fabricated using high-performance, high-reliability CMOS tech-
nology.
Address access times as fast as 20ns are available and the circuit offers
a reduced power standby mode. When
CS
1
goes HIGH or CS
2
goes
LOW, the circuit will automatically go to, and remain in, a low-power stand-
by mode. The low-power (L) version also offers a battery backup data
retention capability at power supply levels as low as 2V.
All inputs and outputs of the IDT7164 are TTL-compatible and
operation is from a single 5V supply, simplifying system designs. Fully
static asynchronous circuitry is used, requiring no clocks or refreshing
for operation.
The IDT7164 is packaged in a 28-pin 300 mil CERDIP, a 28-pin 600
mil CERDIP, 300mil Plastic DIP and 300mil SOJ
Military grade product is manufactured in compliance with MIL-STD-
883, Class B, making it ideally suited to military temperature applications
demanding the highest level of performance and reliability.
Functional Block Diagram
A
0
V
CC
ADDRESS
DECODER
65,536 BIT
MEMORY ARRAY
GND
A
12
0
7
I/O
0
I/O CONTROL
I/O
7
CS
1
CS
2
OE
WE
CONTROL
LOGIC
2967 drw 01
DECEMBER 2016
1
©2016 Integrated Device Technology, Inc.
DSC-2967/17
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