MJD41C (NPN),
MJD42C (PNP)
Complementary Power
Transistors
DPAK for Surface Mount Applications
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Designed for general purpose amplifier and low speed switching
applications.
Features
•
Lead Formed for Surface Mount Applications in Plastic Sleeves
•
•
•
•
•
(No Suffix)
Straight Lead Version in Plastic Sleeves (“1” Suffix)
Electrically Similar to Popular TIP41 and TIP42 Series
Epoxy Meets UL 94 V−0 @ 0.125 in
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
SILICON
POWER TRANSISTORS
6 AMPERES
100 VOLTS, 20 WATTS
COMPLEMENTARY
COLLECTOR
2, 4
COLLECTOR
2, 4
1
BASE
3
EMITTER
1
BASE
3
EMITTER
4
4
1 2
1
3
2
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Power Dissipation
@ T
C
= 25°C
Derate above 25°C
Total Power Dissipation (Note 1)
@ T
A
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
ESD − Human Body Model
ESD − Machine Model
Symbol
V
CEO
V
CB
V
EB
I
C
I
CM
I
B
P
D
20
0.16
P
D
1.75
0.014
T
J
, T
stg
HBM
MM
−65 to +150
3B
C
Max
100
100
5
6
10
2
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
W/°C
W
W/°C
°C
V
V
3
DPAK
CASE 369C
STYLE 1
IPAK
CASE 369D
STYLE 1
MARKING DIAGRAMS
AYWW
J4xCG
AYWW
J4xCG
DPAK
A
Y
WW
J4xC
G
=
=
=
=
IPAK
Assembly Location
Year
Work Week
Device Code
x = 1 or 2
= Pb−Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2016
1
July, 2016 − Rev. 13
Publication Order Number:
MJD41C/D
MJD41C (NPN), MJD42C (PNP)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient (Note 2)
Symbol
R
qJC
R
qJA
Max
6.25
71.4
Unit
°C/W
°C/W
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(I
C
= 30 mAdc, I
B
= 0)
Collector Cutoff Current
(V
CE
= 60 Vdc, I
B
= 0)
Collector Cutoff Current
(V
CE
= 100 Vdc, V
EB
= 0)
Emitter Cutoff Current
(V
BE
= 5 Vdc, I
C
= 0)
ON CHARACTERISTICS
(Note 3)
DC Current Gain
(I
C
= 0.3 Adc, V
CE
= 4 Vdc)
(I
C
= 3 Adc, V
CE
= 4 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 6 Adc, I
B
= 600 mAdc)
Base−Emitter On Voltage
(I
C
= 6 Adc, V
CE
= 4 Vdc)
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 4)
(I
C
= 500 mAdc, V
CE
= 10 Vdc, f
test
= 1 MHz)
Small−Signal Current Gain
(I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 1 kHz)
f
T
3
h
fe
20
−
−
−
MHz
h
FE
30
15
V
CE(sat)
−
V
BE(on)
−
2
1.5
Vdc
−
V
CEO(sus)
100
I
CEO
−
I
CES
−
I
EBO
−
0.5
10
mAdc
50
mAdc
−
mAdc
Vdc
Symbol
Min
Max
Unit
−
75
Vdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
4. f
T
=
⎪h
fe
⎪•
f
test
.
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2
MJD41C (NPN), MJD42C (PNP)
TYPICAL CHARACTERISTICS
T
A
2.5
PD, POWER DISSIPATION (WATTS)
T
C
25
V
CC
+ 30 V
R
C
R
B
D
1
-4 V
SCOPE
2
20
+11 V
0
T
C
-9 V
25
ms
1.5
15
51
1
10
T
A
SURFACE MOUNT
t
r
, t
f
≤
10 ns
DUTY CYCLE = 1%
0.5
0
5
0
25
50
75
100
125
150
T, TEMPERATURE (°C)
R
B
and R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
MUST BE FAST RECOVERY TYPE, e.g.:
MSB5300 USED ABOVE I
B
≈
100 mA
MSD6100 USED BELOW I
B
≈
100 mA
REVERSE ALL POLARITIES FOR PNP.
Figure 1. Power Derating
500
300
200
hFE, DC CURRENT GAIN
100
70
50
30
20
10
7
5
0.06
V
CE
= 2 V
T
J
= 150°C
t, TIME (
μ
s)
25°C
2
1
0.7
0.5
0.3
0.2
0.1
0.07
0.05
Figure 2. Switching Time Test Circuit
T
J
= 25°C
V
CC
= 30 V
I
C
/I
B
= 10
t
r
- 55°C
t
d
@ V
BE(off)
≈
5 V
0.1
0.2
0.3 0.4
0.6
1
2
4
6
0.03
0.02
0.06 0.1
0.2
0.4
0.6
1
2
4
6
I
C
, COLLECTOR CURRENT (AMP)
I
C
, COLLECTOR CURRENT (AMP)
Figure 3. DC Current Gain
Figure 4. Turn−On Time
V
BE(ON)
, BASE−EMITTER VOLTAGE (V)
1.4
V
CE
= 4 V
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
1.2
1.0
0.8 −55°C
−40°C
0.6
0.4
0.2
0
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
25°C
80°C
T
A
= 150°C
1.4
I
C
/I
B
= 10
1.2
1.0
0.8
0.6
0.4
0.2
0
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
−55°C
−40°C
25°C
80°C
T
A
= 150°C
Figure 5. Base Emitter Voltage vs. Collector
Current
Figure 6. Base Emitter Saturation Voltage vs.
Collector Current
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MJD41C (NPN), MJD42C (PNP)
TYPICAL CHARACTERISTICS
1.0
0.9
V
CE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.01
0.1
1
−40°C
and −55°C
10
I
C
/I
B
= 10
5
T
A
= 150°C
80°C
25°C
t, TIME (
μ
s)
1
0.7
0.5
0.3
0.2
t
f
0.1
0.07
0.05
0.06 0.1
3
2
t
s
T
J
= 25°C
V
CC
= 30 V
I
C
/I
B
= 10
I
B1
= I
B2
I
C
, COLLECTOR CURRENT (A)
0.2
0.4 0.6
1
2
I
C
, COLLECTOR CURRENT (AMP)
4
6
Figure 7. Collector Emitter Saturation Voltage
vs. Collector Current
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
2
T
J
= 25°C
1.6
I
C
= 1 A
1.2
2.5 A
5A
C, CAPACITANCE (pF)
200
300
Figure 8. Turn−Off Time
T
J
= 25°C
C
ib
100
70
50
C
ob
0.8
0.4
0
10
20
30
50
100
200 300
I
B
, BASE CURRENT (mA)
500
1000
30
0.5
1
3
10
2
5
20
V
R
, REVERSE VOLTAGE (VOLTS)
30
50
Figure 9. Collector Saturation Region
1
0.7
0.5
0.3
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.01
SINGLE PULSE
0.05
0.02
0.01
Figure 10. Capacitance
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
D = 0.5
0.2
R
qJC(t)
= r(t) R
qJC
R
qJC
= 6.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
q
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1
2 3
5
t, TIME (ms)
10
20
30
50
100
200 300
500
1000
Figure 11. Thermal Response
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4
MJD41C (NPN), MJD42C (PNP)
10
IC, COLLECTOR CURRENT (AMP)
5
3
2
1
0.5
0.3
0.1
500
ms
dc
5 ms
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW RATED V
CEO
T
C
= 25°C SINGLE PULSE
T
J
= 150°C
1
100
ms
1 ms
0.05
0.03
0.01
MJD41C, 42C
2
3
5 7 10
20 30
50 70 100
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 12 is based on T
J(pk)
= 150_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
T
J(pk)
v
150_C. T
J(pk)
may be calculated from the data in
Figure 11. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
Figure 12. Maximum Forward Bias
Safe Operating Area
ORDERING INFORMATION
Device
MJD41CRLG
MJD41CT4G
NJVMJD41CT4G*
MJD42CG
MJD42C1G
MJD42CRLG
NJVMJD42CRLG*
MJD42CT4G
NJVMJD42CT4G*
Package Type
DPAK
(Pb−Free)
DPAK
(Pb−Free)
DPAK
(Pb−Free)
DPAK
(Pb−Free)
IPAK
(Pb−Free)
DPAK
(Pb−Free)
DPAK
(Pb−Free)
DPAK
(Pb−Free)
DPAK
(Pb−Free)
Package
369C
369C
369C
369C
369D
369C
369C
369C
369C
Shipping
†
1,800 / Tape & Reel
2,500 / Tape & Reel
2,500 / Tape & Reel
75 Units / Rail
75 Units / Rail
1,800 / Tape & Reel
1,800 / Tape & Reel
2,500 / Tape & Reel
2,500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable
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