Trench
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXTQ130N20T
IXTH130N20T
V
DSS
I
D25
R
DS(on)
= 200V
= 130A
16m
TO-3P (IXTQ)
G
D
S
Tab
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
LRMS
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25C to 175C
T
J
= 25C to 175C, R
GS
= 1M
Continuous
Transient
T
C
= 25C
Lead Current Limit, RMS
T
C
= 25C, Pulse Width Limited by T
JM
T
C
= 25C
T
C
= 25C
I
S
I
DM
, V
DD
V
DSS
, T
J
175°C
T
C
= 25C
Maximum Ratings
200
200
20
30
130
75
320
4
1
10
830
-55 ... +175
175
-55 ... +175
V
V
V
V
A
A
A
A
J
V/ns
W
C
C
C
°C
°C
Nm/lb.in
g
g
TO-247 ( IXTH)
G
D
S
Tab
G = Gate
S = Source
D
= Drain
Tab = Drain
Features
High Current Handling Capability
Avalanche Rated
Fast Intrinsic rectifier
Low R
DS(on)
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
TO-3P
TO-247
300
260
1.13 / 10
5.5
6.0
Advantages
Easy to Mount
Space Savings
High Power Density
Symbol
Test Conditions
(T
J
= 25C Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 1mA
V
GS
=
20V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 150C
Characteristic Values
Min.
Typ.
Max.
200
2.5
5.0
200
V
V
Applications
nA
25
A
500
μA
16 m
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
© 2014 IXYS CORPORATION, All Rights Reserved
DS99846(10/14)
IXTQ130N20T
IXTH130N20T
Symbol
Test Conditions
(T
J
= 25C Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 25A
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 2 (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 10V, I
D
= 60A, Note 1
Characteristic Values
Min.
Typ.
Max.
70
120
8800
970
122
25
18
57
22
150
44
42
0.25
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.18
C/W
C/W
1 - GATE
2,4 - DRAIN
3 - SOURCE
TO-3P Outline
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25C Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= 50A, V
GS
= 0V, Note 1
I
F
= 65A, -di/dt = 100A/s
V
R
= 100V, V
GS
= 0V
150
Characteristic Values
Min.
Typ.
Max.
130
520
1.0
A
A
V
ns
1
2
3
TO-247 Outline
P
Note
1. Pulse test, t
300s, duty cycle, d
2%.
e
Terminals: 1 - Gate
3 - Source
2 - Drain
Dim.
Millimeter
Min. Max.
A
4.7
5.3
A
1
2.2
2.54
A
2
2.2
2.6
b
1.0
1.4
1.65
2.13
b
1
b
2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
P
3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
7,157,338B2
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
IXTQ130N20T
IXTH130N20T
Fig. 1. Output Characteristics @ T
J
= 25ºC
280
120
V
GS
= 10V
8V
7V
240
200
V
GS
= 10V
8V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
100
7V
I
D
- Amperes
I
D
- Amperes
80
6V
60
160
120
6V
80
40
40
20
5V
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
5V
0
0
5
10
15
20
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 150ºC
3.5
120
V
GS
= 10V
8V
7V
Fig. 4. R
DS(on)
Normalized to I
D
= 65A Value vs.
Junction Temperature
V
GS
= 10V
3.0
100
R
DS(on)
- Normalized
I
D
- Amperes
80
6V
2.5
I
D
= 130A
I
D
= 65A
60
2.0
40
5V
20
1.5
1.0
0
0
1
2
3
4
5
6
0.5
-50
-25
0
25
50
75
100
125
150
175
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 65A Value vs.
Drain Current
4.0
3.5
V
GS
= 10V
T
J
= 175ºC
Fig. 6. Drain Current vs. Case Temperature
90
80
70
External Lead Current Limit
R
DS(on)
- Normalized
3.0
2.5
2.0
1.5
60
I
D
- Amperes
T
J
= 25ºC
50
40
30
20
1.0
0.5
0
40
80
120
160
10
0
200
240
280
-50
-25
0
25
50
75
100
125
150
175
I
D
- Amperes
T
C
- Degrees Centigrade
© 2014 IXYS CORPORATION, All Rights Reserved
IXTQ130N20T
IXTH130N20T
Fig. 7. Input Admittance
160
140
120
180
160
140
T
J
= 150ºC
25ºC
- 40ºC
T
J
= - 40ºC
Fig. 8. Transconductance
100
80
60
40
20
0
3.4
3.8
4.2
4.6
g
f s
- Siemens
I
D
- Amperes
120
100
80
60
40
20
0
25ºC
150ºC
5.0
5.4
5.8
6.2
6.6
0
20
40
60
80
100
120
140
160
180
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
300
10
9
250
8
7
V
DS
= 100V
I
D
= 25A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
200
V
GS
- Volts
T
J
= 150ºC
T
J
= 25ºC
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
6
5
4
3
2
1
150
100
50
0
0
0
15
30
45
60
75
90
105
120
135
150
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
10,000
f = 1 MHz
Ciss
1.E+00
Fig. 12. Maximum Transient Thermal Impedance
Capacitance - PicoFarads
1,000
Coss
Z
(th)JC
- ºC / W
35
40
1.E-01
1.E-02
Crss
100
0
5
10
15
20
25
30
1.E-03
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
V
DS
- Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTQ130N20T
IXTH130N20T
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
20
19
18
R
G
= 2Ω
V
GS
= 15V
V
DS
= 100V
20
19
18
T
J
= 25ºC
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
t
r
- Nanoseconds
16
15
14
13
12
11
10
25
35
45
55
65
75
85
95
105
115
125
I
D
= 65A
I
D
= 130A
t
r
- Nanoseconds
17
17
16
15
14
13
12
11
10
30
40
50
60
70
80
90
100
110
120
130
T
J
= 125ºC
R
G
= 2Ω
V
GS
= 15V
V
DS
= 100V
T
J
- Degrees Centigrade
I
D
- Amperes
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
45
30
25
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
80
t
r
40
35
30
25
20
15
10
2
3
4
V
DS
= 100V
t
d(on)
- - - -
29
23
t
f
V
DS
= 100V
t
d(off)
- - - -
75
T
J
= 125ºC, V
GS
= 15V
R
G
= 2Ω, V
GS
= 15V
t
d ( o n )
- Nanoseconds
t
d ( o f f )
- Nanoseconds
t
r
- Nanoseconds
28
I
D
= 130A, 65A
27
26
25
24
23
5
6
7
8
9
10
t
f
- Nanoseconds
21
I
D
= 130A
70
19
I
D
= 65A
65
17
60
15
I
D
= 130A
55
13
25
35
45
55
65
75
85
95
105
115
50
125
R
G
- Ohms
T
J
- Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
28
26
24
90
90
80
70
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
200
85
80
t
f
V
DS
= 100V
t
d(off)
- - - -
t
f
V
DS
= 100V
t
d(off)
- - - -
R
G
= 2Ω, V
GS
= 15V
T
J
= 25ºC
T
J
= 125ºC, V
GS
= 15V
180
160
140
t
d ( o f f )
- Nanoseconds
t
d ( o f f )
- Nanoseconds
t
f
- Nanoseconds
22
20
18
16
14
T
J
= 25ºC
12
30
40
50
60
70
80
90
100
110
120
75
70
65
60
55
50
130
t
f
- Nanoseconds
60
I
D
= 65A, 130A
50
40
30
20
10
2
3
4
5
6
7
8
9
10
120
100
80
60
40
T
J
= 125ºC
I
D
- Amperes
R
G
- Ohms
© 2014 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_130N20T(8W) 10-07-14
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