BD136G, BD138G, BD140G
Plastic Medium-Power
Silicon PNP Transistors
This series of plastic, medium−power silicon PNP transistors are
designed for use as audio amplifiers and drivers utilizing
complementary or quasi complementary circuits.
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Features
•
High DC Current Gain
•
BD 136, 138, 140 are complementary with BD 135, 137, 139
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
BD136G
BD138G
BD140G
Collector−Base Voltage
BD136G
BD138G
BD140G
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
45
60
80
V
CBO
45
60
100
V
EBO
I
C
I
B
P
D
1.25
10
P
D
12.5
100
T
J
, T
stg
– 55 to + 150
Watts
mW/°C
°C
Watts
mW/°C
5.0
1.5
0.5
Vdc
Adc
Adc
Vdc
Value
Unit
Vdc
1.5 A POWER TRANSISTORS
PNP SILICON
45, 60, 80 V, 12.5 W
COLLECTOR
2, 4
3
BASE
1
EMITTER
TO−225
CASE 77−09
STYLE 1
1 2
3
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
YWW
BD1xxG
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Symbol
R
qJC
R
qJA
Max
10
100
Unit
°C/W
°C/W
Y
WW
BD1xx
G
= Year
= Work Week
= Device Code
xx = 36, 38, 40
= Pb−Free Package
ORDERING INFORMATION
Device
BD136G
BD138G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
Package
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
Shipping
500 Units/Box
500 Units/Box
500 Units/Box
BD140G
1
December, 2013 − Rev. 16
Publication Order Number:
BD136/D
BD136G, BD138G, BD140G
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
Characteristic
Collector−Emitter Sustaining Voltage (Note 1)
(I
C
= 0.03 Adc, I
B
= 0)
BD136G
BD138G
BD140G
Collector Cutoff Current
(V
CB
= 30 Vdc, I
E
= 0)
(V
CB
= 30 Vdc, I
E
= 0, T
C
= 125
_C)
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
DC Current Gain
(I
C
= 0.005 A, V
CE
= 2 V)
(I
C
= 0.15 A, V
CE
= 2 V)
(I
C
= 0.5 A, V
CE
= 2 V)
Collector−Emitter Saturation Voltage (Note 1)
(I
C
= 0.5 Adc, I
B
= 0.05 Adc)
Base−Emitter On Voltage (Note 1)
(I
C
= 0.5 Adc, V
CE
= 2.0 Vdc)
Symbol
BV
CEO
45
60
80
I
CBO
−
−
I
EBO
−
h
FE
*
25
40
25
V
CE(sat)
*
−
V
BE(on)
*
−
1
0.5
Vdc
−
250
−
Vdc
10
−
0.1
10
mAdc
−
−
−
mAdc
Min
Max
Unit
Vdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2.0%.
TYPICAL CHARACTERISTICS
1000
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
CE
= 2 V
h
FE
, DC CURRENT GAIN
150°C
25°C
100
−55°C
0.5
I
C
/I
B
= 10
−55°C
0.4
0.3
25°C
150°C
0.2
0.1
0
10
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain
Figure 2. Collector−Emitter Saturation Voltage
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2
BD136G, BD138G, BD140G
PACKAGE DIMENSIONS
4
TO−225
CASE 77−09
ISSUE AC
1 2
3
FRONT VIEW
3 2
1
BACK VIEW
E
A1
Q
A
PIN 4
BACKSIDE TAB
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
DIM
A
A1
b
b2
c
D
E
e
L
L1
P
Q
MILLIMETERS
MIN
MAX
2.40
3.00
1.00
1.50
0.60
0.90
0.51
0.88
0.39
0.63
10.60
11.10
7.40
7.80
2.04
2.54
14.50
16.63
1.27
2.54
2.90
3.30
3.80
4.20
D
P
1
2
3
L1
L
STYLE 1:
PIN 1. EMITTER
2., 4. COLLECTOR
3. BASE
2X
b2
2X
e
b
FRONT VIEW
c
SIDE VIEW
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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4
BD136/D
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