DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D248
BGD885
860 MHz, 17 dB gain power
doubler amplifier
Product specification
Supersedes data of 2001 Oct 25
2001 Nov 02
NXP Semiconductors
Product specification
860 MHz, 17 dB gain power doubler
amplifier
FEATURES
Excellent linearity
Extremely low noise
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability.
DESCRIPTION
Hybrid amplifier module for CATV/MATV systems
operating over a frequency range of 40 to 860 MHz at a
voltage supply of 24 V (DC).
PINNING - SOT115D
PIN
1
2, 3, 5, 6, 7
4
8
9
input
common
BGD885
DESCRIPTION
10 V, 200 mA supply terminal
+V
B
output
handbook, halfpage
1
2
3
4
5
6
7
8
9
Side view
MBK049
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
G
p
I
tot
power gain
total current consumption (DC)
PARAMETER
CONDITIONS
f = 50 MHz
V
B
= 24 V
MIN.
16.5
MAX.
17.5
450
UNIT
dB
mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
B
V
i
T
stg
T
mb
DC supply voltage
RF input voltage
storage temperature
operating mounting base temperature
PARAMETER
40
20
MIN.
MAX.
26
65
+100
+100
V
dBmV
C
C
UNIT
2001 Nov 02
2
NXP Semiconductors
Product specification
860 MHz, 17 dB gain power doubler
amplifier
CHARACTERISTICS
Table 1
Bandwidth 40 to 860 MHz; V
B
= 24 V; T
mb
= 35
C;
Z
S
= Z
L
= 75
PARAMETER
power gain
slope cable equivalent
flatness of frequency response
input return losses
output return losses
second order distortion
output voltage
noise figure
CONDITIONS
f = 50 MHz
f = 40 to 860 MHz
f = 40 to 860 MHz
f = 40 MHz; note 1
f = 800 to 860 MHz
S
22
d
2
V
o
F
f = 40 MHz; note 1
f = 800 to 860 MHz
note 2
d
im
=
60
dB; note 3
d
im
=
60
dB; note 4
f = 50 MHz
f = 550 MHz
f = 650 MHz
f = 750 MHz
f = 860 MHz
I
tot
Notes
1. Decrease per octave of 1.5 dB.
2. V
p
= 59 dBmV at f
p
= 349.25 MHz;
V
q
= 59 dBmV at f
q
= 403.25 MHz;
measured at f
p
+ f
q
= 752.5 MHz.
3. Measured according to DIN45004B:
f
p
= 341.25 MHz; V
p
= V
o
;
f
q
= 348.25 MHz; V
q
= V
o
6
dB;
f
r
= 350.25 MHz; V
r
= V
o
6
dB;
measured at f
p
+ f
q
f
r
= 339.25 MHz.
4. Measured according to DIN45004B:
f
p
= 851.25 MHz; V
p
= V
o
;
f
q
= 858.25 MHz; V
q
= V
o
6
dB;
f
r
= 860.25 MHz; V
r
= V
o
6
dB;
measured at f
p
+ f
q
f
r
= 849.25 MHz.
5. The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
total current consumption (DC)
note 5
MIN.
16.5
0.2
20
10
20
10
64
63
BGD885
SYMBOL
G
p
SL
FL
S
11
MAX.
17.5
1.6
0.5
53
8
8
8
8
8
450
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dBmV
dBmV
dB
dB
dB
dB
dB
mA
2001 Nov 02
3
NXP Semiconductors
Product specification
860 MHz, 17 dB gain power doubler
amplifier
BGD885
BGD885
1
2
3
4
5
6
7
8
9
input
10 V
C1
C2
VB = 24 V
output
MEA094-2
Fig.2 Test circuit.
List of components
(see Fig.2)
COMPONENT
C1
C2
R
DESCRIPTION
ceramic multilayer capacitor
ceramic multilayer capacitor
resistor
1 nF
56
2 W
VALUE
1 nF (max.)
2001 Nov 02
4
NXP Semiconductors
Product specification
860 MHz, 17 dB gain power doubler
amplifier
PACKAGE OUTLINE
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 9 gold-plated in-line leads
D
E
Z
BGD885
SOT115D
A2
1
A
L
F
S
W
d
U2
B
y
M
B
p
Q
e1
e
q2
q1
b
y
M
B
x
M
B
w
M
2
3
4
5
6
7
8
9
c
U1
q
0
5
scale
10 mm
DIMENSIONS (mm are the original dimensions)
UNIT
A2
A
max. max.
9.5
b
c
d
D
E
max. max. max.
e
e1
F
L
min.
p
Q
max.
q
q1
q2
S
U1
U2
W
w
x
y
0.1
Z
max.
3.8
mm 20.8
4.15
0.51
0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8
3.85
0.38
2.4 38.1 25.4 10.2 4.2 44.75 8.2 6-32 0.25 0.7
44.25 7.8 UNC
OUTLINE
VERSION
SOT115D
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-02-04
10-06-18
2001 Nov 02
5
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