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AUIRFU4292

Description
MOSFET Automotive Logic Le mOhm, 13 nC Qg, IPAK
Categorysemiconductor    Discrete semiconductor   
File Size704KB,12 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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AUIRFU4292 Overview

MOSFET Automotive Logic Le mOhm, 13 nC Qg, IPAK

AUIRFU4292 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-251-3
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage250 V
Id - Continuous Drain Current9.3 A
Rds On - Drain-Source Resistance275 mOhms
Qg - Gate Charge13 nC
QualificationAEC-Q101
PackagingTube
Height6.22 mm
Length6.73 mm
Width2.38 mm
Factory Pack Quantity3000
Unit Weight0.139332 oz
 
AUTOMOTIVE GRADE
AUIRFR4292
AUIRFU4292
V
DSS
R
DS(on)
I
D
D
D
Features
Advanced Process Technology
Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
 
250V
typ.
max.
275m
345m
9.3A
Description
Specifically designed for Automotive applications, this HEXFET
®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide
variety of other applications.
Base part number
AUIRFU4292
AUIRFR4292
Package Type
I-Pak
D-Pak
G
S
G
S
D
D-Pak
AUIRFR4292
I-Pak
AUIRFU4292
G
Gate
D
Drain
S
Source
Standard Pack
Orderable Part Number
Form
Quantity
Tube
75
AUIRFU4292
Tube
75
AUIRFR4292
Tape and Reel Left
3000
AUIRFR4292TRL
Tape and Reel Right
3000
AUIRFR4292TRR
Note
EOL notice # 530
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(Tested)
I
AR
E
AR
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
9.3
6.6
40
100
0.67
± 20
130
97
See Fig.15,16, 12a, 12b
-55 to + 175
300
 
Units
A
W
W/°C
V
mJ
A
mJ
°C 
 
Thermal Resistance
 
Symbol
R
JC
R
JA
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mount)
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.5
50
110
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
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