b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 74421
S-81956-Rev. B, 25-Aug-08
SUD50P04-34
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
50
V
GS
= 10 thru 5
V
4
V
40
I
D
- Drain C
u
rrent (A)
I
D
- Drain C
u
rrent (A)
1.6
2.0
30
1.2
20
3
V
10
0.8
T
C
= 125 °C
0.4
25 °C
- 55 °C
0
0
1
2
3
4
5
0.0
0.0
0.6
1.2
1.8
2.4
3.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
30
T
C
= - 55 °C
25 °C
24
R
DS(on)
-
On-Resistance (Ω)
g
f s
- Transcond
u
ctance (S)
125 °C
18
0.052
0.065
Transfer Characteristics
V
GS
= 4.5
V
0.039
V
GS
= 10
V
0.026
12
6
0.013
0
0
4
8
12
16
20
0.000
0
10
20
30
40
50
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Transconductance
0.15
I
D
= 15 A
R
DS(on)
- On-Resistance (Ω)
0.12
C - Capacitance (pF)
1600
2000
On-Resistance vs. Drain Current
C
iss
1200
0.09
0.06
125 °C
800
0.03
25 °C
0.00
0
1
2
3
4
5
6
7
8
9
10
400
C
rss
0
0
8
16
C
oss
24
32
40
V
GS
- Gate-to-Source
Voltage
(V)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 74421
S-81956-Rev. B, 25-Aug-08
Capacitance
www.vishay.com
3
SUD50P04-34
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
I
D
= 30 A
V
GS
- Gate-to-So
u
rce
V
oltage (
V
)
8
R
DS(on)
- On-Resistance
(
N
ormalized)
V
DS
= 20
V
6
V
DS
= 10
V
4
V
DS
= 30
V
2
1.8
V
GS
= 4.5
V
1.5
V
GS
= 10
V
1.2
2.1
I
D
= 15 A
0.9
0
0
7
14
21
28
35
0.6
- 50
- 25
0
25
50
75
100
125
150
175
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
100
0.7
On-Resistance vs. Junction Temperature
I
D
= 250 µA
10
I
S
- Source Current (A)
T
J
= 150 °C
0.5
V
GS(th)
(V)
1
0.3
I
D
= 5 mA
0.1
0.1
T
J
= 25 °C
0.01
- 0.1
0.001
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
- 0.3
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
Source-Drain Diode Forward Voltage
150
150
Threshold Voltage
120
120
Po
w
er (
W
)
Po
w
er (
W
)
90
90
60
60
30
30
0
0.001
0.01
0.1
Time (s)
1
10
100
0
0.001
0.01
0.1
Time (s)
1
10
Single Pulse Power, Junction-to-Ambient
Single Pulse Power, Junction-to-Case
www.vishay.com
4
Document Number: 74421
S-81956-Rev. B, 25-Aug-08
SUD50P04-34
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
Limited
by
R
DS(on)
*
10
I
D
- Drain C
u
rrent (A)
1 ms
10 ms
1
100 ms
1s
T
A
= 25 C
Single Pulse
0.1
BVDSS
Limited
0.01
0.01
0.1
1
10
100
0.01
0.01
0.1
1
10 s
DC
I
D
- Drain C
u
rrent (A)
10
100
Limited
by
R
DS(on)
*
100
µs
1 ms
10 ms
100 ms
DC
T
C
= 25 C
Single Pulse
0.1
BVDSS
Limited
10
100
1
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
8
24
Safe Operating Area, Junction-to-Case
6
I
D
- Drain C
u
rrent (A)
I
D
- Drain C
u
rrent (A)
19
Package Limited
5
14
3
10
2
5
0
0
25
50
75
100
125
150
175
0
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating**, Junction-to-Ambient
Current Derating**, Junction-to-Case
** The power dissipation P
D
is based on T
J(max)
= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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