The DG441, DG442 monolithic quad analog switches are
designed to provide high speed, low error switching of analog
and audio signals. The DG441 has a normally closed
function. The DG442 has a normally open function.
Combining low on-resistance (50
,
typ.) with high speed
(t
ON
150 ns, typ.), the DG441, DG442 are ideally suited for
upgrading DG201A/202 sockets. Charge injection has been
minimized on the drain for use in sample-and-hold circuits.
To achieve high voltage ratings and superior switching
performance, the DG441, DG442 are built on Vishay
Siliconix’s high-voltage silicon-gate process. An epitaxial
layer prevents latchup.
Each switch conducts equally well in both directions when
on, and blocks input voltages to the supply levels when off.
FEATURES
•
Halogen-free according to IEC 61249-2-21
Definition
• Low on-resistance: 50
• Low leakage: 80 pA
• Low power consumption: 0.2 mW
• Fast switching action - t
ON
: 150 ns
• Low charge injection - Q: - 1 pC
• DG201A/DG202 upgrades
• TTL/CMOS-compatible logic
• Single supply capability
•
Compliant to RoHS Directive 2002/95/EC
BENEFITS
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Less signal errors and distortion
Reduced power supply requirements
Faster throughput
Improved reliability
Reduced pedestal errors
Simplifies retrofit
Simple interfacing
Audio switching
Battery powered systems
Data acquisition
Hi-Rel systems
Sample-and-hold circuits
Communication systems
Automatic test equipment
Medical instruments
APPLICATIONS
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
IN
1
D
1
S
1
V-
GND
S
4
D
4
IN
4
1
2
3
4
5
Top View
6
7
8
11
10
9
S
3
D
3
IN
3
S
4
8
14
S
3
16
15
14
13
12
IN
2
Key
D
2
S
2
V+
NC
NC
GND
S
1
V-
4
5
3
2
1
20
19
18
17
S
2
V+
NC
NC
D
1
IN
1
NC
IN
2
D
2
LCC
6
7
Dual-In-Line and SOIC
DG441
DG441
Top View
16
15
9
D
4
10
IN
4
11
NC
12
IN
3
13
D
3
TRUTH TABLE
Logic
0
1
Logic "0"
0.8
V
Logic "1"
2.4
V
Document Number: 70053
S11-1066-Rev. J, 30-May-11
DG441
On
Off
DG442
Off
On
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG441, DG442
Vishay Siliconix
ORDERING INFORMATION
Temp. Range
Package
Part Number
DG441DJ
DG441DJ-E3
DG442DJ
DG442DJ-E3
DG441DY
DG441DY-E3
DG441DY-T1
DG441DY-T1-E3
16-pin narrow SOIC
DG442DY
DG442DY-E3
DG442DY-T1
DG442DY-T1-E3
16-pin plastic DIP
- 40 °C to 85 °C
ABSOLUTE MAXIMUM RATINGS
Parameter
V+ to V-
GND to V-
Digital Inputs , V
S
, V
D
Continuous Current (any terminal)
Current, S or D (pulsed at 1 ms, 10 % duty cycle)
Storage Temperature
(AK suffix)
(DJ, DY suffix)
16-pin plastic DIP
c
Power Dissipation (Package)
b
16-pin CerDIP
d
16-pin narrow SOIC
d
LCC-20
d
a
Limit
44
25
(V-) - 2 to (V+) + 2
or 30 mA, whichever occurs first
30
100
- 65 to 150
- 65 to 125
450
900
900
1200
Unit
V
mA
°C
mW
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6 mW/°C above 75 °C.
d. Derate 12 mW/°C above 75 °C.
SCHEMATIC DIAGRAM
Typical Channel
V+
5 V Reg
IN
X
Level
Shift/
Drive
V-
V+
GND
V-
Figure 1.
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2
Document Number: 70053
S11-1066-Rev. J, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG441, DG442
Vishay Siliconix
SPECIFICATIONS
a
(Dual Supplies)
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
On-Resistance Match Between
Channels
e
V
ANALOG
R
DS(on)
R
DS(on)
I
S(off)
Switch Off Leakage Current
I
D(off)
Channel On Leakage Current
Digital Control
Input Current V
IN
Low
Input Current V
IN
High
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
e
Off Isolation
e
Crosstalk (Channel-to-
Channel)
Source Off Capacitance
e
Drain Off Capacitance
e
Channel On Capacitance
e
Power Supplies
Positive Supply Current
Negative Supply Current
Ground Current
DG441
DG442
I
IL
I
IH
V
IN
under test = 0.8 V,
All Other = 2.4 V
V
IN
under test = 2.4 V
All Other = 0.8 V
R
L
= 1 k, C
L
= 35 pF
V
S
=
±
10 V
See Figure 2
C
L
= 1 nF, V
S
=
0
V
V
gen
= 0 V, R
gen
= 0
R
L
= 50
,
C
L
= 5 pF
f = 1 MHz
f = 1 MHz
V
ANALOG
=
0
V
Full
Full
- 0.01
0.01
- 500
- 500
500
500
- 500
- 500
500
nA
500
I
D(on)
I
S
= - 10 mA, V
D
=
±
8.5 V
V+ = 13.5 V, V- = - 13.5 V
I
S
= - 10 mA, V
D
=
±
10 V
V+ = 15 V, V- = - 15 V
V+ = 16.5, V- = - 16.5 V
V
D
=
±
15.5 V, V
S
=
±
15.5 V
V+ = 16.5 V, V- = - 16.5 V
V
S
= V
D
=
±
15.5 V
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
50
- 15
15
85
100
4
5
- 15
15
85
100
4
5
- 0.5
-5
- 0.5
-5
- 0.5
- 10
0.5
5
0.5
5
0.5
10
nA
V
Symbol
V
IN
= 2.4 V, 0.8 V
f
Temp.
b
Typ.
c
A Suffix
D Suffix
- 55 °C to 125 °C - 40 °C to 85 °C
Min.
d
Max.
d
Min.
d
Max.
d
Unit
±
0.01
±
0.01
± 0.08
- 0.5
- 20
- 0.5
- 20
- 0.5
- 40
0.5
20
0.5
20
0.5
40
t
ON
t
OFF
Q
OIRR
X
TALK
C
S(off)
C
D(off)
C
D(on)
I+
I-
I
GND
Room
Room
Room
Room
Room
Room
Room
Room
Room
Full
Room
Full
Full
150
90
110
-1
60
100
4
4
16
15
- 0.0001
- 15
250
120
210
250
120
210
pC
ns
dB
pF
100
-1
-5
- 100
-1
-5
- 100
100
µA
V+ = 16.5 V, V- = - 16.5 V
V
IN
= 0 or 5 V
Document Number: 70053
S11-1066-Rev. J, 30-May-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG441, DG442
Vishay Siliconix
SPECIFICATIONS
a
(Single Supply)
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
Power Supplies
Positive Supply Current
Negative Supply Current
Ground Current
V
ANALOG
R
DS(on)
I
S
= - 10 mA, V
D
=
3
V, 8 V
V+ = 10.8 V
R
L
= 1 k, C
L
= 35 pF
V
S
=
8
V
See Figure 2
C
L
= 1nF, V
gen
= 6 V, R
gen
= 0
Full
Room
Full
Room
Room
Room
Full
Room
Full
Full
100
0
12
160
200
450
200
0
12
160
200
450
200
ns
pC
100
-1
- 100
- 100
-1
- 100
- 100
100
µA
V
Symbol
V
IN
= 2.4 V, 0.8 V
f
Temp.
b
Typ.
c
A Suffix
D Suffix
- 55 °C to 125 °C - 40 °C to 85 °C
Min.
d
Max.
d
Min.
d
Max.
d
Unit
t
ON
t
OFF
Q
I+
I-
I
GND
300
60
2
15
- 0.0001
- 15
V+ = 13.2 V, V- = 0 V
V
IN
= 0 or 5 V
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
4
Document Number: 70053
S11-1066-Rev. J, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG441, DG442
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
R
DS(on)
- Drain-Source On-Resistance (Ω)
R
DS(on)
- Drain-Source On-Resistance ()
80
70
60
125 °C
50
40
30
20
10
0
- 15
- 10
-5
0
5
10
15
20
- 15
- 10
- 5
0
5
10
15
V
D
- Drain
Voltage
(V)
V
D
- Drain Voltage (V)
0 °C
- 40 °C
- 55 °C
85
°C
25 °C
V+ = 15 V
V- = - 15 V
80
±5
V
60
±
8V
± 10
V
± 12
V
40
± 15
V
± 20
V
20
0
- 20
R
DS(on)
vs. V
D
and Power Supply Voltage
300
V-
= 0 V
R
DS(on)
- Drain-Source On-Resistance ()
R
DS(on)
- Drain-Source On-Resistance ()
250
V+ = 5 V
200
120
100
80
60
40
20
0
0
140
R
DS(on)
vs. V
D
and Temperature
125 °C
85 °C
25 °C
150
8V
100
10 V
12 V
- 55 °C
0 °C
- 40 °C
V+ = 12 V
V- = 0 V
15 V
20 V
50
0
0
4
8
12
16
20
V
D
- Drain Voltage
(V)
2
4
6
8
10
12
V
D
- Drain Voltage (V)
R
DS(on)
vs. V
D
and Unipolar
Power Supply Voltage
140
120
100
20
Q - (pC)
(- dB)
80
60
Off Isolation
40
- 10
20
0
100
1K
10K
100K
1M
10M
V+ = 15 V
V- = - 15 V
Ref. 10 dBm
- 20
- 30
- 10
10
0
50
40
Crosstalk
30
R
DS(on)
vs. V
D
and Temperature
(Single 12-V Supply)
C
L
= 1 nF
V+ = 15 V
V- = - 15 V
V+ = 12 V
V- = 0 V
-5
0
V
S
- Source Voltage (V)
5
10
f - Frequency (Hz)
Crosstalk and Off Isolation vs. Frequency
Charge Injection vs. Source Voltage
Document Number: 70053
S11-1066-Rev. J, 30-May-11
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5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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51mcu
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