d. Maximum under steady state conditions is 80 °C/W.
Document Number: 73852
S09-0138-Rev. B, 02-Feb-09
www.vishay.com
1
Si4456DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward
Body Diode Voltage
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 13 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 3 A
0.71
38
42
21
17
T
C
= 25 °C
7
70
1.1
60
65
A
V
ns
nC
ns
b
Symbol
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 40 V, V
GS
= 0 V
V
DS
= 40 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
=
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 4.5 V, I
D
= 15 A
V
DS
= 15 V, I
D
= 20 A
Min.
40
Typ.
Max.
Unit
V
54
-7
1.5
2.8
± 100
1
10
30
0.0031
0.0037
110
5670
0.0038
0.0045
mV/°C
V
nA
µA
A
Ω
S
V
DS
= 20 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 20 V, V
GS
= 10 V, I
D
= 20 A
V
DS
= 20 V, V
GS
= 4.5 V, I
D
= 20 A
f = 1 MHz
V
DD
= 20 V, R
L
= 2
Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
621
287
81
37.5
17
11
1.05
145
208
56
15
21
1.6
220
320
85
23
32
90
85
15
122
57
pF
nC
Ω
ns
V
DD
= 20 V, R
L
= 2
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
58
55
8
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73852
S09-0138-Rev. B, 02-Feb-09
Si4456DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
70
V
GS
= 10
V
thru 4
V
56
I
D
- Drain C
u
rrent (A)
0.9
42
I
D
- Drain C
u
rrent (A)
T
A
= 25 °C, unless otherwise noted
1.2
0.6
T
C
= 25 °C
0.3
28
14
V
GS
= 3
V
0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
T
C
= 125 °C
T
C
= - 55 °C
4
5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.0045
7000
Transfer Characteristics
C
iss
R
DS(on)
- On-Resistance (mΩ)
0.0041
C - Capacitance (pF)
V
GS
= 10
V
V
GS
= 4.5
V
0.0037
5600
4200
0.0033
2800
0.0029
1400
C
oss
C
rss
0
8
16
24
32
40
0.0025
0
10
20
30
40
50
60
0
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 20 A
V
GS
- Gate-to-So
u
rce
V
oltage (
V
)
8
V
DS
= 10
V
6
V
DS
= 20
V
V
DS
= 30
V
4
R
DS(on)
- On-Resistance
1.4
1.6
Capacitance
V
GS
= 10
V,
I
D
= 20 A
(
N
ormalized)
1.2
V
GS
= 4.5
V,
I
D
= 20 A
1.0
2
0.8
0
0
17
34
51
68
85
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73852
S09-0138-Rev. B, 02-Feb-09
www.vishay.com
3
Si4456DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
T
A
= 25 °C, unless otherwise noted
100
R
DS(on)
- Drain-to-So
u
rce On-Resistance (Ω)
0.020
10
I
S
- So
u
rce C
u
rrent (A)
T
A
= 150 °C
1
0.016
0.012
0.1
T
A
= 25 °C
0.01
0.008
T
A
= 125 °C
0.004
T
A
= 25 °C
0.000
0
2
4
6
8
10
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.5
200
On-Resistance vs. Gate-to-Source Voltage
0.2
160
V
GS(th)
(
V
)
- 0.1
I
D
= 5 mA
- 0.4
I
D
= 250
µA
- 0.7
Po
w
er (
W
)
120
80
40
- 1.0
- 50
0
- 25
0
25
50
75
100
125
150
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)*
10
Single Pulse Power, Junction-to-Ambient
I
D
- Drain C
u
rrent (A)
1 ms
10 ms
1
100 ms
1s
0.1
T
A
= 25 °C
Single Pulse
0.01
0.01
*
V
GS
0.1
1
10
10 s
DC
100
V
DS
- Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 73852
S09-0138-Rev. B, 02-Feb-09
Si4456DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
T
A
= 25 °C, unless otherwise noted
40
32
I
D
- Drain C
u
rrent (A)
24
16
8
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
10
2.0
8
1.6
Po
w
er (W)
6
Po
w
er (W)
1.2
4
0.8
2
0.4
0
0
25
50
75
100
125
150
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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