BSS8402DW
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
Q1
Q2
BV
DSS
60V
-50V
R
DS(ON) Max
13.5Ω @ V
GS
= 10V
10Ω @ V
GS
= -5V
I
D
T
A
= +25°
C
115mA
-130mA
Features and Benefits
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Complementary Pair
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
Mechanical Data
SOT363
D
1
G
2
S
2
Case: SOT363
Case Material: Molded Plastic. “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
e3
Terminal Connections: See Diagram
Weight: 0.006 grams (Approximate)
Q
1
Q
2
S
1
G
1
D
2
Top View
Top View
Internal Schematic
Ordering Information
(Note 5)
Part Number
BSS8402DW-7-F
BSS8402DW-13-F
BSS8402DWQ-7
BSS8402DWQ-13
Notes:
Compliance
Standard
Standard
Automotive
Automotive
Case
SOT363
SOT363
SOT363
SOT363
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to https://www.diodes.com/quality/.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
KNP = Product Type Marking Code
YM or YM= Date Code Marking
Y or Y = Year (ex: F = 2018)
M = Month (ex: 9 = September)
Date Code Key
Year
2003
Code
P
Month
Code
Jan
1
2004
R
Feb
2
2005
S
Mar
3
2006
T
Apr
4
~
~
2018
F
May
5
2019
G
Jun
6
2020
H
Jul
7
2021
I
Aug
8
2022
J
Sep
9
2023
K
2024
L
Oct
O
2025
M
Nov
N
2026
N
Dec
D
BSS8402DW
Document number: DS30380 Rev. 22 - 2
1 of 8
www.diodes.com
March 2018
© Diodes Incorporated
BSS8402DW
Maximum Ratings – Total Device
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P
D
R
θJA
T
J,
T
STG
Value
200
625
-55 to +150
Unit
mW
°
C/W
°
C
Maximum Ratings N-CHANNEL – Q
1
, 2N7002 Section
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R
GS
1.0MΩ
Gate-Source Voltage
Drain Current (Note 6)
Continuous
Pulsed
Continuous
Continuous @ +100°
C
Pulsed
Symbol
V
DSS
V
DGR
V
GSS
I
D
Value
60
60
±20
±40
115
73
800
Unit
V
V
V
mA
Maximum Ratings P-CHANNEL – Q
2
, BSS84 Section
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R
GS
20KΩ
Gate-Source Voltage
Drain Current (Note 6)
Note:
Symbol
V
DSS
V
DGR
Continuous
Continuous
V
GSS
I
D
Value
-50
-50
20
-130
Unit
V
V
V
mA
6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Incorporated’s suggested pad layout document,
which can be found on our website at http://www.diodes.com/package-outlines.html.
BSS8402DW
Document number: DS30380 Rev. 22 - 2
2 of 8
www.diodes.com
March 2018
© Diodes Incorporated
BSS8402DW
Electrical Characteristics N-CHANNEL – Q
1
, 2N7002 Section
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
t
D(ON)
t
D(OFF)
7.0
11
20
20
ns
ns
V
DD
= 30V, I
D
= 0.2A,
R
L
= 150Ω, V
GEN
= 10V, R
GEN
= 25Ω
C
iss
C
oss
C
rss
22
11
2.0
50
25
5.0
pF
pF
pF
V
DS
= 25V, V
GS
= 0V, f = 1.0MHz
V
GS(TH)
@ T
J
= +25°
C
R
DS(ON)
@ T
J
= +125°
C
I
D(ON)
g
FS
1.0
0.5
80
3.2
4.4
1.0
2.5
7.5
13.5
V
Ω
A
mS
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 5.0V, I
D
= 0.05A
V
GS
= 10V, I
D
= 0.5A
V
GS
= 10V, V
DS
= 7.5V
V
DS
=10V, I
D
= 0.2A
@ T
C
= +25°
C
@ T
C
= +125°
C
Symbol
BV
DSS
I
DSS
I
GSS
Min
60
Typ
70
Max
1.0
500
±10
Unit
V
µA
nA
Test Condition
V
GS
= 0V, I
D
= 10µA
V
DS
= 60V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
Electrical Characteristics P-CHANNEL – Q
2
, BSS84 Section
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Note:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
g
FS
C
iss
C
oss
C
rss
t
D(ON)
t
D(OFF)
Min
-50
-0.8
0.05
Typ
10
18
Max
-1
-2
-100
10
-2.0
10
45
25
12
Unit
V
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
Test Condition
V
GS
= 0V, I
D
= -250µA
V
DS
= -50V, V
GS
= 0V, T
J
= +25°
C
V
DS
= -50V, V
GS
= 0V, T
J
= +125°
C
V
DS
= -25V, V
GS
= 0V, T
J
= +25°
C
V
GS
=
20V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= -1mA
V
GS
= -5V, I
D
= -0.100A
V
DS
= -25V, I
D
= -0.1A
V
DS
= -25V, V
GS
= 0V, f = 1.0MHz
V
DD
= -30V, I
D
= -0.27A,
R
GEN
= 50Ω, V
GS
= -10V
7. Short duration pulse test used to minimize self-heating effect.
BSS8402DW
Document number: DS30380 Rev. 22 - 2
3 of 8
www.diodes.com
March 2018
© Diodes Incorporated
BSS8402DW
N-CHANNEL – 2N7002 Section
1.0
I
D
, DRAIN-SOURCE CURRENT (A)
7
T
j
= 25°
C
0.8
R
DS(ON)
, STATIC DRAIN-SOURCE
ON-RESISTANCE (
)
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 On-Region Characteristics
5
6
5
4
3
2
1
0
0
0.4
0.6
0.8
1.0
I
D
, DRAIN CURRENT (A)
Figure 2 On-Resistance vs. Drain Current
0.2
0.6
0.4
0.2
0
3.0
R
DS(ON)
, STATIC DRAIN-SOURCE
ON-RESISTANCE (
)
6
2.5
R
DS(ON)
, STATIC DRAIN-SOURCE
ON-RESISTANCE (
)
250
P
D
, POWER DISSIPATION (mW)
5
4
2.0
3
2
1.5
V
GS
= 10V,
I
D
= 200mA
1
1.0
-55
-30
-5
20
45
70 95
120 145
T
J
, JUNCTION TEMPERATURE (°
C)
Figure 3 On-Resistance vs. Junction Temperature
0
0
2
4
6
8
10 12 14 16 18
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 4 On-Resistance vs. Gate-Source Voltage
10
9
V
GS,
GATE-SOURCE CURRENT (V)
V
DS
= 10V
8
7
6
5
4
3
2
1
0
0
0.4
0.8
0.6
I
D
, DRAIN CURRENT (A)
Figure 5 Typical Transfer Characteristics
0.2
1
200
150
100
50
0
50
75
25
100 125 150 175 200
T
A
, AMBIENT TEMPERATURE (°
C)
Figure 6 Max Power Dissipation vs. Ambient Temperature
0
BSS8402DW
Document number: DS30380 Rev. 22 - 2
4 of 8
www.diodes.com
March 2018
© Diodes Incorporated
BSS8402DW
1000
I
DSS
, DRAIN LEAKAGE CURRENT (nA)
)
A
n
(
T
N
E
R 100
R
U
C
E
G
A
K
A
E
L
10
N
I
A
R
D
,
S
I
S
D
2
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
T
(
S
G
T
A
= 150°
C
T
A
= 125°
C
T
A
= 85°
C
T
A
= 25°
C
)
V
(
E
G
A
T
L
O
V
D
L
O
H
S
E
R
H
T
E
T
A
G
,
)
H
V
1.8
1.6
1.4
1.2
1
1
10 15 20 25 30 35 40 45 50 55 60
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 7 Typical Drain-Source Leakage Current vs. Voltage
5
0.8
-25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (°
C)
Figure 8 Gate Threshold Variation vs. Junction Temperature
-50
P-CHANNEL – BSS84 Section
-600
T
A
= 25°
C
-1.0
I
D
, DRAIN-SOURCE CURRENT (mA)
-500
I
D
, DRAIN CURRENT (A)
-0.8
-400
-0.6
-300
-0.4
-200
-100
-0.2
0
-1
-2
-3
-4
-5
V
DS
, DRAIN-SOURCE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Drain-Source Current vs. Drain-Source Voltage
0
-0.0
0
-5
-1
-2
-3
-4
-6
-7
-8
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
Figure 10 Drain Current vs. Gate-Source Voltage
10
9
R
DS(ON)
, STATIC DRAIN-SOURCE
ON-RESISTANCE (
)
15
V
GS
= -10V
I
D
= -0.13A
7
6
5
4
3
2
T
A
= 125°
C
R
DS
, ON-RESISTANCE (
)
T
A
= 25 °
C
8
12
9
6
3
1
0
0
-1
-2
-4
-5
-3
V
GS
,
TO SOURCE VOLTAGE
V
GS
, GATE
GATE TO SOURCE (V)
(V)
Figure 11 On-Resistance vs. Gate-Source Voltage
0
-50
BSS8402DW
Document number: DS30380 Rev. 22 - 2
5 of 8
www.diodes.com
0
25
50
75 100 125 150
(°
C)
T
J
, JUNCTION TEMPERATURE (癈 )
Figure 12 On-Resistance vs. Junction Temperature
March 2018
-25
© Diodes Incorporated
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