EEWORLDEEWORLDEEWORLD

Part Number

Search

MRF8P20160HSR5

Description
RF MOSFET Transistors HV8 2GHZ 160W NI780HS-4
Categorysemiconductor    Discrete semiconductor   
File Size803KB,17 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

MRF8P20160HSR5 Online Shopping

Suppliers Part Number Price MOQ In stock  
MRF8P20160HSR5 - - View Buy Now

MRF8P20160HSR5 Overview

RF MOSFET Transistors HV8 2GHZ 160W NI780HS-4

MRF8P20160HSR5 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryRF MOSFET Transistors
RoHSDetails
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage65 V
TechnologySi
Gain16.5 dB
Output Power37 W
Minimum Operating Temperature- 30 C
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseNI-780S-4
PackagingCut Tape
PackagingReel
ConfigurationSingle
Operating Frequency1.88 GHz to 2.025 GHz
Factory Pack Quantity50
Vgs - Gate-Source Voltage10 V
Vgs th - Gate-Source Threshold Voltage1.8 V
Unit Weight0.228180 oz
Freescale Semiconductor
Technical Data
Document Number: MRF8P2160H
Rev. 1, 7/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1880 to
2025 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
Typical Doherty Single--Carrier W--CDMA Performance: V
DD
= 28 Volts,
I
DQA
= 550 mA, V
GSB
= 1.6 Vdc, P
out
= 37 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF.
Frequency
1880 MHz
1900 MHz
1920 MHz
G
ps
(dB)
16.5
16.6
16.5
η
D
(%)
44.8
45.3
45.8
Output PAR
(dB)
7.0
6.9
6.9
ACPR
(dBc)
--29.8
--30.1
--30.6
MRF8P20160HR3
MRF8P20160HSR3
1880-
-2025 MHz, 37 W AVG., 28 V
SINGLE W-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFETs
Capable of Handling 10:1 VSWR, @ 32 Vdc, 1900 MHz, 150 Watts CW
Output Power (3 dB Input Overdrive from Rated P
out
)
Typical P
out
@ 3 dB Compression Point
160 Watts CW
2025 MHz
Typical Doherty Single--Carrier W--CDMA Performance: V
DD
= 28 Volts,
I
DQA
= 550 mA, V
GSB
= 1.6 Vdc, P
out
= 37 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF.
Frequency
2025 MHz
G
ps
(dB)
15.3
η
D
(%)
44.0
Output PAR
(dB)
6.8
ACPR
(dBc)
--30.0
CASE 465M-
-01, STYLE 1
NI-
-780-
-4
MRF8P20160HR3
CASE 465H-
-02, STYLE 1
NI-
-780S-
-4
MRF8P20160HSR3
Features
Production Tested in a Symmetrical Doherty Configuration
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
RoHS Compliant
NI--780--4 in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
RF
inA
/V
GSA
3
1 RF
outA
/V
DSA
RF
inB
/V
GSB
4
2 RF
outB
/V
DSB
(Top View)
Figure 1. Pin Connections
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Value
--0.5, +65
--6.0, +10
32, +0
-- 65 to +150
150
225
Unit
Vdc
Vdc
Vdc
°C
°C
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
©
Freescale Semiconductor, Inc., 2010. All rights reserved.
MRF8P20160HR3 MRF8P20160HSR3
1
RF Device Data
Freescale Semiconductor
Does anyone have the ATMLH606 data sheet?
[backcolor=rgb(239, 245, 249)] Or tell me what model can be used as a replacement, or what programmer can be used to read and write. Thank you [/backcolor]...
mengmeng90 Microchip MCU
[Play with C2000 Launchpad] Novice LESSON5-Simple operation of buttons
[align=center]Simple button operation[/align][align=left][font=Times New Roman][color=#000000] [/color][/font][/align][align=left][color=#000000][font=Times New Roman]After learning about LED[/font] l...
常见泽1 Microcontroller MCU
430 Communication with the microcontroller returns an error
[p=20, null, left][color=rgb(51, 51, 51)][font=Arial, 宋体]Why does this communication verification program appear? When I send a character through the serial port, it returns oka, but when I send a str...
pengbiao1210 Microcontroller MCU
STR710F2T6 MCU problem help
Help: Dear experts, I recently used an ARM7 microcontroller from ST, model STR710F2T6. Some of the microcontrollers started to reset continuously at around 50 degrees, and some may reset at 60 or 70 d...
f56007 stm32/stm8
Why are the OK, Cancel, and Close buttons of the Windows Mobile single-document MFC program developed with VS2005 all invalid?
As the title says, I developed a single document MFC program using VS2005 and Windows Mobile. Why can't the close button on the upper right corner be used? But the close button based on the dialog box...
lwyphl Embedded System
About Wireless Computer Monitor
With the widespread application of 2.4G wireless transmission chips, NRF2401 is widely used in various fields. Our computer wireless mouse and wireless keyboard are already very mature. Then wireless ...
RF研究 RF/Wirelessly

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2324  1396  796  2224  1708  47  29  17  45  35 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号