, O
ne,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
VN66 SERIES
N-Channel Enhancement-Mode MOS Transistors
PRODUCT SUMMARY
PART
V(BR)DSS
ros(ON)
NUMBER
(V)
(n>
VN66AD
60
3
ID
(A)
1.7
TO-220/TO-220SD
PACKAGE
TO-220
TOP VIEW
VN66AFD
60
3
1,46
TO-Z20SD
1 23
Performance Curves: VNDQ06 (See Section 7)
TO-220
1 GATE
2 & TAB - DRAIN
3 SOURCE
TO-220SD
1 SOURCE
2 GATE
3 & TAB - DRAIN
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted)
2
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
T
C
=25°C
Continuous Drain Current
Tc = WC
SYMBOL
VDS
VQS
VN66AD
60
±30
1,7
1
3
20
VN86AFD
60
UNITS
V
±30
1.46
0.92
3
15
6
-55 to 150
"C
300
W
A
l .,
ID
I DM
Pulsed Drain Current
1
T
c
= 25°C
Power Dissipation
T
c
= 100°C
Operating Junction and Storage Temperature
Lead Temperature
(1/16" from case for 10 seconds)
PD
Tj.
T
stg
8
T
L
THERMAL RESISTANCE
THERMAL RESISTANCE
Junction-to-Case
2
Absolute
SYMBOL
RthJC
VN66AD
6.25
VN66AFD
8.3
UNITS
"C/W
'Pulse width limited by maximum junction temperature.
maximum ratings have been revised.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
VN66 SERIES
ELECTRICAL CHARACTERISTICS
1
LIMITS
VN66
4
PARAMETER
STATIC
Drain-Source
Breakdown Voltage
Gato Threshold
Voltage
Date-Body Leakage
Zero Gate Voltage
Drain Currant
On-State Drain
Current^
Drain-Source
cm-Resistance'
Forward
,
Transconductanos •*
Common Source
Output Conductance
3
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
SWITCHING
Turn-On Time
Turn-Off Time
NOTES: 1.
2.
3.
4.
1
ON
SYMBOL
TEST CONDITIONS
4
TYP
a
MIN
MAX
UNIT
V
(8Fl)OSS
V
OS
= O V , I
0
= 10.HA
70
1.5
±
1
60
V
0.8
2.5
±100
+ 500
1
10
1.5
6
3
ft
«A
A
nA
VGSIM
IGSS
loss
'o(ON|
VDS = VQS.ID = 1 mA
Vns = 0 V
V
03
=±30V
V
QS
= 0 V
VQS = 48V
T
0
=125'C
T
0
=125°C
± 5
0.05
0.3
1.8
1.8
1.3
V
DS
= 10 V. VQS = 10 V
V
QS
= 5V. I
D
= 0.3 A
r
DS[ON)
V<j
S
= 10 V
l
o
= 1 A
|
Tc=125
a
C
2.6
350
1100
170
e
mS
MS
9PS
«OS
V
0
s = 10 V, I
0
= O.S A
V
DS
= 7.5V. 1
0
= 0.1 A
e
iss
'
V
os
= 25 V
35
25
6
so
40
10
GSSS
VQS = 0 V
f = 1 MHz
PF
c,,,
»OPF
V
0
o = 25 V, R
L
= 2 3
ft.
I
D
= 1 A. V
QEN
= 10V
RG- 25
fL
(Switching time Is essentially Independent of
operating temperature)
a
9.5
15
15
T
0
= 25 «C unless otherwise noted.
For design aid only, not subject to production testing.
Pulse test: PW = 300.us , duty cycle £2%.
Data sheet L'mlts and/or test conditions have been revised.
Embedded System
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