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IXGT30N60B2D1

Description
IGBT Transistors 30 Amps 600V 1.8 V Rds
CategoryDiscrete semiconductor    The transistor   
File Size505KB,7 Pages
ManufacturerIXYS
Environmental Compliance
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IXGT30N60B2D1 Overview

IGBT Transistors 30 Amps 600V 1.8 V Rds

IXGT30N60B2D1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerIXYS
Parts packaging codeTO-268AA
package instructionTO-268, 3 PIN
Contacts4
Reach Compliance Codecompliant
Shell connectionCOLLECTOR
Maximum collector current (IC)70 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE WITH BUILT-IN DIODE
JEDEC-95 codeTO-268AA
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)350 ns
Nominal on time (ton)30 ns
Advance Technical Data
HiPerFAST
TM
IGBT
Optimized for 10-25 KHz hard
switching and up to 150 KHz
resonant switching
IXGH 30N60B2D1 V
CES
IXGT 30N60B2D1 I
C25
V
CE(sat)
t
fi
typ
= 600 V
= 70 A
< 1.8 V
= 82 ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C (limited by leads)
T
C
= 110°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 10
Clamped inductive load @
600 V
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
70
30
150
I
CM
= 60
190
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
TO-247 AD (IXGH)
C (TAB)
G
C
E
TO-268 (IXGT)
G
E
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
d
Weight
Mounting torque (M3) (TO-247)
TO-247
TO-268
Features
Medium frequency IGBT
Square RBSOA
High current handling capability
MOS Gate turn-on
- drive simplicity
Applications
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
1.13/10Nm/lb.in.
6
4
g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
2.5
T
J
= 25°C
T
J
= 150°C
5.0
200
3
±100
T
J
= 25°C
1.8
V
µA
mA
nA
V
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
= 250
µA,
V
CE
= V
GE
V
CE
= V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= 24 A, V
GE
= 15 V
© 2004 IXYS All rights reserved
DS99134A(04/04)

IXGT30N60B2D1 Related Products

IXGT30N60B2D1 IXGH30N60B2D1
Description IGBT Transistors 30 Amps 600V 1.8 V Rds IGBT Transistors 30 Amps 600V 1.8 V Rds
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Parts packaging code TO-268AA TO-247AD
package instruction TO-268, 3 PIN FLANGE MOUNT, R-PSFM-T3
Contacts 4 3
Reach Compliance Code compliant compliant
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 70 A 70 A
Collector-emitter maximum voltage 600 V 600 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
JEDEC-95 code TO-268AA TO-247AD
JESD-30 code R-PSSO-G2 R-PSFM-T3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 2 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT APPLICABLE
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES NO
Terminal surface Matte Tin (Sn) Tin (Sn)
Terminal form GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT APPLICABLE
transistor applications POWER CONTROL POWER CONTROL
Transistor component materials SILICON SILICON
Nominal off time (toff) 350 ns 350 ns
Nominal on time (ton) 30 ns 30 ns
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