TISP4070H3BJ THRU TISP4115H3BJ,
TISP4125H3BJ THRU TISP4220H3BJ,
TISP4240H3BJ THRU TISP4400H3BJ
*R
oH
S
CO
M
PL
IA
NT
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4xxxH3BJ Overvoltage Protector Series
TISP4xxxH3BJ Overview
This TISP® device series protects central office, access and customer premise equipment against overvoltages on the telecom line. The
TISP4xxxH3BJ is available in a wide range of voltages and has a high current capability, allowing minimal series resistance to be used. These
protectors have been specified mindful of the following standards and recommendations: GR-1089-CORE, FCC Part 68, UL1950, EN 60950,
IEC 60950, ITU-T K.20, K.21 and K.45. The TISP4350H3BJ meets the FCC Part 68 “B” ringer voltage requirement and survives the Type A and
B impulse tests. These devices are housed in a surface mount SMB (DO-214AA) package.
Summary Electrical Characteristics
Part #
TISP4070H3
TISP4080H3
TISP4095H3
TISP4115H3
TISP4125H3
TISP4145H3
TISP4165H3
TISP4180H3
TISP4200H3
TISP4220H3
TISP4240H3
TISP4250H3
TISP4265H3
TISP4290H3
TISP4300H3
TISP4350H3
TISP4395H3
TISP4400H3
V
DRM
V
58
65
75
90
100
120
135
145
155
160
180
190
200
220
230
275
320
300
V
(BO)
V
70
80
95
115
125
145
165
180
200
220
240
250
265
290
300
350
395
400
V
T
@ I
T
V
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
I
DRM
µA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
I
(BO)
mA
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
I
T
A
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
I
H
mA
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
C
o
@ -2 V
pF
120
120
120
120
65
65
65
65
65
65
55
55
55
55
55
55
55
55
Functionally
Replaces
P0640SC†
P0720SC†
P0900SC†
P1100SC†
P1300SC†
P1500SC
P1800SC
P2300SC†
P2600SC†
P3100SC
P3500SC
† Bourns part has an improved protection voltage
Summary Current Ratings
Parameter
Waveshape
Value
2/10
500
1.2/50, 8/20
300
10/160
250
I
TSP
A
5/320
200
10/560
160
10/1000
100
I
TSM
A
1 cycle 60 Hz
60
di/dt
A/µs
2/10 Wavefront
400
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3BJ Overvoltage Protector Series
ITU-T K.20/21 Rating . . . . . . . . . . . . . 8 kV 10/700, 200 A 5/310
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
SMBJ Package (Top View)
Device
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4200
‘4220
‘4240
‘4250
‘4265
‘4290
‘4300
‘4350
‘4395
‘4400
V
DRM
V
58
65
75
90
100
120
135
145
155
160
180
190
200
220
230
275
320
300
V
(BO)
V
70
80
95
115
125
145
165
180
200
220
240
250
265
290
300
350
395
400
R(B)
1
2
T(A)
MDXXBG
Device Symbol
T
SD4XAA
R
Terminals T and R correspond to the
alternative line designators of A and B
Rated for International Surge Wave Shapes
I
TSP
Waveshape
Standard
A
Low Differential Capacitance ...................................67 pF max.
............................................... UL Recognized Component
2/10
µs
8/20
µs
10/160
µs
10/700
µs
10/560
µs
10/1000
µs
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
ITU-T K.20/21
FCC Part 68
GR-1089-CORE
500
300
250
200
160
100
Description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning
flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used
for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of
devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup as
the diverted current subsides.
This TISP4xxxH3BJ range consists of eighteen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are
guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These high (H) current protection devices
are in a plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed carrier reel pack. For alternative voltage and
holding current values, consult the factory. For lower rated impulse currents in the SMB package, the 50 A 10/1000 TISP4xxxM3BJ series is
available.
How To Order
Device
TISP4xxxH3BJ
Package
BJ (J-Bend DO-214AA/SMB)
Carrier
Embossed Tape Reeled
Bulk Pack
Order As
TISP4xxxH3BJR-S
TISP4xxxH3BJ-S
Insert xxx value corresponding to protection voltages of 070, 080, 095, 115 etc.
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3BJ Overvoltage Protector Series
Absolute Maximum Ratings, TA = 25
°
C (Unless Otherwise Noted)
Rating
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4200
‘4220
‘4240
‘4250
‘4265
‘4290
‘4300
‘4350
‘4395
‘4400
Symbol
Value
±
58
±
65
±
75
±
90
±100
±120
±135
±145
±155
±160
±180
±190
±200
±220
±230
±275
±320
±300
500
300
250
220
200
200
200
160
100
55
60
2.1
400
-40 to +150
-65 to +150
Unit
Repetitive peak off-state voltage, (see Note 1)
V
DRM
V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
2/10
µs
(GR-1089-CORE, 2/10
µs
voltage wave shape)
8/20
µs
(IEC 61000-4-5, 1.2/50
µs
voltage, 8/20 current combination wave generator)
10/160
µs
(FCC Part 68, 10/160
µs
voltage wave shape)
5/200
µs
(VDE 0433, 10/700
µs
voltage wave shape)
0.2/310
µs
(I3124, 0.5/700
µs
voltage wave shape)
5/310
µs
(ITU-T K.20/21, 10/700
µs
voltage wave shape)
5/310
µs
(FTZ R12, 10/700
µs
voltage wave shape)
10/560
µs
(FCC Part 68, 10/560
µs
voltage wave shape)
10/1000
µs
(GR-1089-CORE, 10/1000
µs
voltage wave shape)
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 200 A
Junction temperature
Storage temperature range
NOTES: 1.
2.
3.
4.
5.
I
TSP
A
I
TSM
di
T
/dt
T
J
T
stg
A
A/µs
°C
°C
See Applications Information and Figure 10 for voltage values at lower temperatures.
Initially, the TISP4xxxH3BJ must be in thermal equilibrium with T
J
= 25
°C.
The surge may be repeated after the TISP4xxxH3BJ returns to its initial conditions.
See Applications Information and Figure 11 for current ratings at other temperatures.
EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient
temperatures above 25
°C.
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3BJ Overvoltage Protector Series
Electrical Characteristics, TA = 25
°
C (Unless Otherwise Noted)
Parameter
Repetitive peak off-
state current
Test Conditions
V
D
= V
DRM
T
A
= 25
°C
T
A
= 85
°C
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4200
‘4220
‘4240
‘4250
‘4265
‘4290
‘4300
‘4350
‘4395
‘4400
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4200
‘4220
‘4240
‘4250
‘4265
‘4290
‘4300
‘4350
‘4395
‘4400
±0.15
±0.15
±5
T
A
= 85
°C
±10
Min.
Typ.
Max.
±5
±10
±70
±80
±95
±115
±125
±145
±165
±180
±200
±220
±240
±250
±265
±290
±300
±350
±395
±400
±78
±88
±103
±124
±134
±154
±174
±189
±210
±230
±250
±261
±276
±301
±311
±362
±408
±413
±0.6
±3
±0.6
Unit
µA
I
DRM
V
(BO)
Breakover voltage
dv/dt =
±750
V/ms,
R
SOURCE
= 300
Ω
V
V
(BO)
Impulse breakover
voltage
dv/dt
≤
±1000
V/µs, Linear voltage ramp,
Maximum ramp value =
±500
V
di/dt =
±20
A/µs, Linear current ramp,
Maximum ramp value =
±10
A
V
I
(BO)
V
T
I
H
dv/dt
I
D
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
dv/dt =
±750
V/ms, R
SOURCE
= 300
Ω
I
T
=
±5
A, t
W
= 100
µs
I
T
=
±5
A, di/dt = - /+30 mA/ms
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
V
D
=
±50
V
A
V
A
kV/µs
µA
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3BJ Overvoltage Protector Series
Electrical Characteristics, T A = 25
°
C (Unless Otherwise Noted) (continued)
Parameter
Test Conditions
f = 100 kHz, V
d
= 1 V rms, V
D
= 0,
Min.
‘4070 thru ‘4115
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4070 thru ‘4115
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4070 thru ‘4115
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4070 thru ‘4115
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4125 thru ‘4220
‘4240 thru ‘4400
Typ.
145
80
70
130
71
60
120
65
55
62
30
24
28
22
Max.
170
90
84
150
79
67
140
74
62
73
35
28
33
26
Unit
f = 100 kHz, V
d
= 1 V rms, V
D
= -1 V
C
off
Off-state capacitance
f = 100 kHz, V
d
= 1 V rms, V
D
= -2 V
pF
f = 100 kHz, V
d
= 1 V rms, V
D
= -50 V
f = 100 kHz, V
d
= 1 V rms, V
D
= -100 V
(see Note 6)
NOTE
6: To avoid possible voltage clipping, the ‘4125 is tested with V
D
= -98 V.
Thermal Characteristics
Parameter
Test Conditions
EIA/JESD51-3 PCB, I
T
= I
TSM(1000)
,
T
A
= 25
°C,
(see Note 7)
265 mm x 210 mm populated line card,
4-layer PCB, I
T
= I
TSM(1000)
, T
A
= 25
°C
50
Min.
Typ.
Max.
113
°C/W
Unit
R
θJA
Junction to free air thermal resistance
NOTE
7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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