BAS286
www.vishay.com
Vishay Semiconductors
Small Signal Schottky Diode
FEATURES
• Integrated
discharge
protection
ring
against
static
• Very low forward voltage
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
DESIGN SUPPORT TOOLS
click logo to get started
APPLICATIONS
Models
Available
• Applications where a very low forward voltage is required
MECHANICAL DATA
Case:
QuadroMELF (SOD-80)
Weight:
approx. 34 mg
Cathode band color:
black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
PARTS TABLE
PART
BAS286
ORDERING CODE
BAS286-GS18 or BAS286-GS08
CIRCUIT CONFIGURATION
Single
TYPE MARKING
-
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward continuous current
Average forward current
t
p
= 10 ms
t
p
1 s
TEST CONDITION
SYMBOL
V
R
I
FSM
I
FRM
I
F
I
FAV
VALUE
50
5
500
200
200
UNIT
V
A
mA
mA
mA
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
TEST CONDITION
On PC board
50 mm x 50 mm x 1.6 mm
SYMBOL
R
thJA
T
j
T
stg
VALUE
320
125
-65 to +150
UNIT
K/W
°C
°C
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
I
F
= 0.1mA
I
F
= 1 mA
Forward voltage
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
Reserve current
Diode capacitance
V
R
= 40 V
V
R
= 1 V, f = 1 MHz
SYMBOL
V
F
V
F
V
F
V
F
V
F
I
R
C
D
MIN.
TYP.
MAX.
300
380
450
600
900
5
8
UNIT
mV
mV
mV
mV
mV
μA
pF
Rev. 2.0, 02-Jun-17
Document Number: 85502
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BAS286
www.vishay.com
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
P - Reverse Power Dissipation (mW)
R
500
C
D
- Diode Capacitance (pF)
450
400
350
300
250
200
150
100
50
0
25
50
75
100
125
150
15830
Vishay Semiconductors
10
V
R
= 50 V
9
8
7
6
5
4
3
2
1
0
0.1
1
10
f = 1 MHz
P
R
- Limit
at 100 % V
R
R
thJA
= 540 K/W
P
R
- Limit
at 80 % V
R
100
15827
T
j
- Junction Temperature (°C)
V
R
- Reverse Voltage (V)
Fig. 1 - Max. Reverse Power Dissipation vs.
Junction Temperature
Fig. 4 - Diode Capacitance vs. Reverse Voltage
10000
V
R
= V
RRM
I
R
- Reverse Current (µA)
1000
100
10
1
25
15828
50
75
100
125
150
T
j
- Junction Temperature (°C)
Fig. 2 - Reverse Current vs. Junction Temperature
1000
T
j
= 125 °C
I
F
- Forward Current (A)
100
T
j
= 25 °C
10
1
0.1
0
15829
0.5
1.0
1.5
V
F
- Forward Voltage (V)
Fig. 3 - Forward Current vs. Forward Voltage
Rev. 2.0, 02-Jun-17
Document Number: 85502
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BAS286
www.vishay.com
PACKAGE DIMENSIONS
in millimeters (inches):
QuadroMELF (SOD-80)
Vishay Semiconductors
1.6 (0.063)
1.4 (0.055)
> R3 (R0.118)
glass
0.47 (0.019) max.
3.7 (0.146)
3.3 (0.130)
The gap between plug and glass can
be either on cathode or anode side
Foot print recommendation:
1.25 (0.049) min.
2.5 (0.098) max.
(0
.0
gl
a s 67)
s
Cathode identification
1.
7
5 (0.197) ref.
96 12071
Rev. 2.0, 02-Jun-17
Document Number: 85502
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
2 (0.079) min.
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www.vishay.com
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Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000