DMP2004VK
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
Max
0.9Ω @ V
GS
= -4.5V
-20V
1.4Ω @ V
GS
= -2.5V
-0.44A
I
D
Max
T
A
= +25°C
-0.53A
Features
Dual P-Channel MOSFET
Low On-Resistance
Very Low Gate Threshold Voltage V
GS(TH)
< 1V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Mechanical Data
Case: SOT563
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (Approximate)
Applications
Battery Charging
Power Management Functions
DC-DC Converters
Portable Power Adaptors
SOT563
D1
D2
D
2
G
1
S
1
G1
G2
S
2
G
2
D
1
ESD PROTECTED
Gate Protection
Diode
S1
Gate Protection
Diode
S2
Top View
Bottom View
Q1 P-CHANNEL
MOSFET
Q2 P-CHANNEL
MOSFET
Top View
Pin Out
Ordering Information
(Note 4)
Part Number
DMP2004VK-7
Notes:
Case
SOT563
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free,
"Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT563
PAB = Marking Code
YM = Date Code Marking
Y = Year (ex: U = 2007)
M = Month (ex: 9 = September)
PAB YM
Date Code Key
Year
Code
Month
Code
2007
U
Jan
1
Feb
2
….
….
Mar
3
2015
C
Apr
4
2016
D
May
5
Jun
6
2017
E
Jul
7
2018
F
Aug
8
2019
G
Sep
9
Oct
O
2020
H
Nov
N
2021
I
Dec
D
July 2015
© Diodes Incorporated
DMP2004VK
Document number: DS30916 Rev. 7 - 2
1 of 6
www.diodes.com
DMP2004VK
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) V
GS
= -4.5V
Continuous Drain Current (Note 5) V
GS
= -2.5V
Pulsed Drain Current (Note 6)
Steady
State
Steady
State
T
A
= +25C
T
A
= +70C
T
A
= +25C
T
A
= +70C
Symbol
V
DSS
V
GSS
I
D
I
D
I
DM
Value
-20
±8
-0.53
-0.44
-0.44
-0.35
-1.8
Units
V
V
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P
D
R
θJA
T
J,
T
STG
Value
400
312
-65 to +150
Units
mW
°C/W
°C
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
Min
-20
-0.5
200
-0.5
Typ
0.7
1.1
1.7
Max
-1.0
1.0
-1.0
0.9
1.4
2.0
-1.2
175
30
20
Unit
V
µA
µA
V
Ω
mS
V
pF
pF
pF
Test Condition
V
GS
= 0V, I
D
= -250µA
V
DS
= -20V, V
GS
= 0V
V
GS
=
4.5V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -4.5V, I
D
= -430mA
V
GS
= -2.5V, I
D
= -300mA
V
GS
= -1.8V, I
D
= -150mA
V
DS
= -10V, I
D
= -0.2A
V
GS
= 0V, I
S
= 115mA
V
DS
= -16V, V
GS
= 0V
f = 1.0MHz
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMP2004VK
Document number: DS30916 Rev. 7 - 2
2 of 6
www.diodes.com
July 2015
© Diodes Incorporated
DMP2004VK
-I
D
, DRAIN CURRENT (A)
0
0
-V
DS
, DRAIN SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
-I
D
, DRAIN CURRENT (A)
-V
GS
, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
-V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage vs. Ambient Temperature
R
DS(on)
, STATIC DRAIN-SOURCE
ON-RESISTANCE (
)
R
DS(on)
, STATIC DRAIN-SOURCE
ON-RESISTANCE (
)
R
DS(on)
, STATIC DRAIN-SOURCE
ON-RESISTANCE (
)
-I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
10
-I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
-I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 6 Static Drain-Source On-Resistance vs.
Drain-Source Current
DMP2004VK
Document number: DS30916 Rev. 7 - 2
3 of 6
www.diodes.com
July 2015
© Diodes Incorporated
DMP2004VK
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 7 Static Drain-Source On-State Resistance
vs. Ambient Temperature
-V
DS
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Reverse Drain Current vs. Source-Drain Voltage
-I
D
, DRAIN-CURRENT (A)
Fig. 9 Forward Transfer Admittance vs. Drain-Current
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Capacitance
DMP2004VK
Document number: DS30916 Rev. 7 - 2
4 of 6
www.diodes.com
July 2015
© Diodes Incorporated
DMP2004VK
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
SOT563
A
B
C
D
G
K
M
SOT563
Dim Min
Max Typ
A
0.15 0.30 0.20
B
1.10 1.25 1.20
C
1.55 1.70 1.60
D
-
-
0.50
G
0.90 1.10 1.00
H
1.50 1.70 1.60
K
0.55 0.60 0.60
L
0.10 0.30 0.20
M
0.10 0.18 0.11
All Dimensions in mm
H
L
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C2
C2
SOT563
Dimensions Value (in mm)
Z
2.2
G
1.2
X
0.375
Y
0.5
C1
1.7
C2
0.5
Z
G
C1
Y
X
DMP2004VK
Document number: DS30916 Rev. 7 - 2
5 of 6
www.diodes.com
July 2015
© Diodes Incorporated
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