IPB65R280C6 datasheet, PDF - EEWORLD Datasheet

IPB65R280C6: DescriptionMOSFET N-Ch 700V 13.8A D2PAK-2 CoolMOS C6; Categorysemiconductor Discrete semiconductor; File Size1MB，19 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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MOSFET N-Ch 700V 13.8A D2PAK-2 CoolMOS C6

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	Infineon
Product Category	MOSFET
RoHS	Details
Technology	Si
Mounting Style	SMD/SMT
Package / Case	TO-263-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	650 V
Id - Continuous Drain Current	13.8 A
Rds On - Drain-Source Resistance	250 mOhms
Vgs th - Gate-Source Threshold Voltage	2.5 V
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	45 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Pd - Power Dissipation	104 W
Channel Mode	Enhancement
Packaging	Cut Tape
Packaging	MouseReel
Packaging	Reel
Height	4.4 mm
Length	10 mm
Transistor Type	1 N-Channel
Width	9.25 mm
Fall Time	12 ns
Rise Time	11 ns
Factory Pack Quantity	1000
Typical Turn-Off Delay Time	105 ns
Typical Turn-On Delay Time	13 ns
Unit Weight	0.139332 oz

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