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SMMBD7000LT1G

Description
Diodes - General Purpose, Power, Switching DL SWITCHING DIODE
CategoryDiscrete semiconductor    diode   
File Size55KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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SMMBD7000LT1G Overview

Diodes - General Purpose, Power, Switching DL SWITCHING DIODE

SMMBD7000LT1G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
Parts packaging codeSOT-23
package instructionHALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
Contacts3
Manufacturer packaging code318-08
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time5 weeks
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.7 V
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current0.5 A
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.225 W
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.004 µs
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
MMBD7000L, SMMBD7000L
Dual Switching Diode
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
www.onsemi.com
MAXIMUM RATINGS (EACH DIODE)
Rating
Reverse Voltage
Forward Current
Forward Surge Current
(60 Hz @ 1 cycle)
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
Symbol
V
R
I
F
I
FSM
I
FRM
Value
100
200
1.6
0.5
Unit
V
mA
A
A
1
ANODE
3
CATHODE/ANODE
2
CATHODE
SOT−23 (TO−236)
CASE 318
STYLE 11
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1)T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to
Ambient
Total Device Dissipation
Alumina Substrate, (Note 2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
qJA
P
D
556
300
Unit
mW
mW/°C
°C/W
mW
M5C
M
G
1
M5C MG
G
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
2.4
R
qJA
417
T
J
, T
stg
−55 to +150
mW/°C
°C/W
°C
ORDERING INFORMATION
Device
MMBD7000LT1G
SMMBD7000LT1G
MMBD7000LT3G
SMMBD7000LT3G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
3,000 /
Tape & Reel
3,000 /
Tape & Reel
10,000 /
Tape & Reel
10,000 /
Tape & Reel
1. FR− 5 = 1.0

0.75

0.062 in.
2. Alumina = 0.4

0.3

0.024 in. 99.5% alumina.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 1994
1
June, 2017 − Rev. 8
Publication Order Number:
MMBD7000LT1/D

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