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IRLR7821CPBF

Description
MOSFET D-PAK
Categorysemiconductor    Discrete semiconductor   
File Size319KB,12 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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IRLR7821CPBF Overview

MOSFET D-PAK

IRLR7821CPBF Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryMOSFET
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-252-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current65 A
Rds On - Drain-Source Resistance12.5 mOhms
Vgs - Gate-Source Voltage20 V
Qg - Gate Charge10 nC
ConfigurationSingle
Pd - Power Dissipation75 W
Height2.3 mm
Length6.5 mm
Transistor Type1 N-Channel
Width6.22 mm
Unit Weight0.012346 oz
Applications
l
High Frequency Synchronous Buck
Converters for Computer Processor Power
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
Lead-Free
Benefits
l
Very Low RDS(on) at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
HEXFET Power MOSFET
IRLR7821PbF
IRLU7821PbF
®
10m
:
PD - 95091B
V
DSS
R
DS(on)
max
30V
Qg
10nC
D-Pak
I-Pak
IRLR7821PbF IRLU7821PbF
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
30
Units
V
™
f
47
f
65
260
75
37.5
± 20
A
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
W
W/°C
°C
0.50
-55 to + 175
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
Typ.
Max.
2.0
50
110
Units
°C/W
–––
–––
–––
Notes

through
…
are on page 11
www.irf.com
1
10/02/06

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