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1N5819UR

Description
1 A, SILICON, SIGNAL DIODE, DO-213AB
CategoryDiscrete semiconductor    diode   
File Size289KB,6 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

1N5819UR Overview

1 A, SILICON, SIGNAL DIODE, DO-213AB

1N5819UR Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
Parts packaging codeDO-213AB
package instructionO-LELF-R2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresMETALLURGICALLY BONDED
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-213AB
JESD-30 codeO-LELF-R2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage45 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTIN LEAD
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
1N5818UR-1, 1N5819UR-1, 1N6761UR-1
and CDLL variants
Qualified Levels*:
JAN, JANTX, JANTXV
and JANS
Available on
commercial
versions
1 Amp Schottky Barrier Rectifiers
Qualified per MIL-PRF-19500/586
DESCRIPTION
This 1 Amp schottky barrier rectifier is metallurgically bonded and offers military grade
qualifications for the part numbers of 1N5819UR-1 and 1N6761UR-1 for high-reliability
applications. This small diode is hermetically sealed and bonded into a DO-213AB MELF
glass package.
Important:
For the latest information, visit our website
http://www.microsemi.com.
DO-213AB (MELF,
LL41) Package
FEATURES
JEDEC registered 1N5818, 1N5819 and 1N6761 numbers.
Hermetically sealed DO-41 glass package.
Metallurgically bonded.
*1N5819UR-1 and 1N6761UR-1 only are available in JAN, JANTX, JANTXV and JANS qualifications
per MIL-PRF-19500/586.
(See
part nomenclature
for all available options.)
RoHS compliant versions available (commercial grade only).
Also available in:
DO-41 package
(axial-leaded)
1N5818-1, 1N5819-1,
1N6759-1 – 1N6761-1 and
DSB variants
APPLICATIONS / BENEFITS
Small size for high density mounting using flexible thru-hole leads (see package illustration).
Low reverse (leakage) currents.
Non-sensitive to ESD per MIL-STD-750 test method 1020 (human body model).
Inherently radiation hard as described in Microsemi “MicroNote
050”.
MAXIMUM RATINGS
@ T
A
= +25 ºC unless otherwise specified
Parameters/Test Conditions
Storage Temperature
Junction Temperature
Thermal Resistance, Junction-to-Lead
Thermal Resistance, Junction-to-Ambient
Average Rectified Output Current
@ T
A
= 55 ºC on PCB board
Surge Peak Forward Current
Solder Temperature @ 10 s
Symbol
T
STG
T
J
R
ӨJEC
R
ӨJA
I
O
I
FSM
Value
-65 to +150
-65 to +125
-65 to +150
40
220
1.0
25
260
Unit
ºC
ºC
ºC/W
ºC/W
A
A
o
C
1N5819UR-1
1N6761UR-1
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
NOTE:
1. T
EC
= 55 ºC for the 1N5819UR-1 and T
EC
= 37 ºC for the 1N6761UR-1.
T4-LDS-0301-1, Rev. 1 (6/25/13)
©2013 Microsemi Corporation
Page 1 of 6
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