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1N5402 BK

Description
Rectifiers 3.0Amp 200Vrrm Rec 200Vr 140Vrms 200A
Categorysemiconductor    Discrete semiconductor   
File Size324KB,3 Pages
ManufacturerCentral Semiconductor
Environmental Compliance
Download Datasheet Parametric View All

1N5402 BK Overview

Rectifiers 3.0Amp 200Vrrm Rec 200Vr 140Vrms 200A

1N5402 BK Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerCentral Semiconductor
Product CategoryRectifiers
RoHSDetails
Package / CaseDO-201AD
Vr - Reverse Voltage200 V
If - Forward Current3 A
TypeFast Recovery Rectifiers
Vf - Forward Voltage1.2 V
Max Surge Current200 A
Ir - Reverse Current5 uA
Recovery Time-
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 175 C
PackagingBulk
ProductRectifiers
Pd - Power Dissipation-
Factory Pack Quantity100
1N5400 THRU 1N5408
w w w. c e n t r a l s e m i . c o m
SILICON RECTIFIERS
3.0 AMP, 50 THRU 1000 VOLT
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1N5400 series
types are axial lead silicon power rectifiers designed for
power supply and general purpose rectifier applications.
MARKING: FULL PART NUMBER
DO-201AD CASE
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
1N
SYMBOL 5400 5401 5402 5403 5404 5405 5406 5407 5408 UNITS
Peak Repetitive Reverse Voltage
VRRM
50 100 200 300 400 500 600 800 1000
V
DC Blocking Voltage
VR
50 100 200 300 400 500 600 800 1000
V
RMS Reverse Voltage
Average Forward Current (TA=75°C)
Peak Forward Surge Current (tp=8.3ms) IFSM
Operating and Storage
Junction Temperature
TJ, Tstg
VR(RMS)
IO
35
70
140
210
280
3.0
200
-65 to +175
350
420
560
700
V
A
A
°C
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IR
VR=Rated VRRM
IR
VF
VR=Rated VRRM, TA=100°C
IF=3.0A
MAX
5.0
500
1.2
UNITS
μA
μA
V
R1 (11-March 2013)

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