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BAV99-G3-08

Description
Diodes - General Purpose, Power, Switching 70V 150mA 1A IFSM Dual Series
CategoryDiscrete semiconductor    diode   
File Size104KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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BAV99-G3-08 Overview

Diodes - General Purpose, Power, Switching 70V 150mA 1A IFSM Dual Series

BAV99-G3-08 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
package instructionGREEN PACKAGE-3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time12 weeks
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.15 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.3 W
Maximum repetitive peak reverse voltage70 V
Maximum reverse recovery time0.006 µs
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
BAV99-G
www.vishay.com
Vishay Semiconductors
Small Signal Switching Diode, Dual in Series
FEATURES
3
• Fast switching speed
• High conductance
• Surface mount package ideally suited for
automatic insertion
1
18109
2
• Connected in series
• AEC-Q101 qualified available
(part number on request)
• Base P/N-G3 - green, commercial grade
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESIGN SUPPORT TOOLS
click logo to get started
Models
Available
MECHANICAL DATA
Case:
SOT-23
Weight:
approx. 8.1 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
BAV99-G
ORDERING CODE
BAV99-G3-08 or BAV99-G3-18
CIRCUIT CONFIGURATION
Dual serial
TYPE MARKING
JEG
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Non repetitive peak reverse voltage
Repetitive peak reverse voltage
= working peak reverse voltage
= DC blocking voltage
Peak forward surge current
t
p
= 1 s
t
p
= 1 μs
Half wave rectification with resistive load
and f
50 MHz, on ceramic substrate
10 mm x 8 mm x 0.7 mm
On ceramic substrate
10 mm x 8 mm x 0.7 mm
On ceramic substrate
10 mm x 8 mm x 0.7 mm
TEST CONDITION
SYMBOL
V
RM
V
RRM
= V
RWM
= V
R
I
FSM
I
F(AV)
I
F
P
tot
VALUE
100
70
1
4.5
150
mA
250
300
mW
V
UNIT
A
Average forward current
Forward current
Power dissipation
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
Junction and storage temperature range
Operating temperature range
TEST CONDITION
On ceramic substrate
10 mm x 8 mm x 0.7 mm
SYMBOL
R
thJA
T
j
= T
stg
T
op
VALUE
430
-55 to +150
-55 to +150
UNIT
K/W
°C
°C
Rev. 1.2, 13-Feb-18
Document Number: 85421
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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