G5853-11 datasheet, PDF - EEWORLD Datasheet

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G5853-11: DescriptionInGaAs PIN photodiode; CategoryLED optoelectronic/LED photoelectric; File Size215KB，4 Pages; ManufacturerHamamatsu; Websitehttp://www.hamamatsu.com

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G5853-11 Overview

InGaAs PIN photodiode

G5853-11 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Maker	Hamamatsu
package instruction	TO-8, 6 PIN
Reach Compliance Code	unknow
Configuration	SINGLE
Maximum dark power	7500 nA
Infrared range	YES
Installation features	THROUGH HOLE MOUNT
Number of functions	1
Maximum operating temperature	70 °C
Minimum operating temperature	-40 °C
Optoelectronic device types	PIN PHOTODIODE
peak wavelength	2300 nm
Minimum reverse breakdown voltage	2 V
Semiconductor material	InGaAs
shape	ROUND
size	1 mm
surface mount	NO
Base Number Matches	1

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PHOTODIODE

InGaAs PIN photodiode

G8423/G8373/G5853 series

Long wavelength type (up to 2.6 µm)

Features

Applications

Long cut-off wavelength: 2.6 µm

Gas analysis

3-pin TO-18 package: low price

Spectrophotometer

Thermoelectrically cooled TO-8 package: low dark current

NIR (near infrared) photometry

Active area:

φ0.3

φ3

Accessories (Optional)

Specifications / Absolute maximum ratings

Di mensional

Package

outline

Active

area

(mm)

φ0.3

φ0.5

φ1

φ3

φ0.3

φ1

φ3

φ0.3

φ1

φ3

Heatsink for one-stage TE-cooled type A3179

Heatsink for two-stage TE-cooled type A3179-01

Temperature controller for TE-cooled type C1103-04

Thermistor

power

dissipation

(mW)

Absolute maximum ratings

TE-cooler Reverse Operating

Storage

allowable voltage temperature temperature

current

Topr

Tstg

(A)

(V)

(°C)

Type No.

Cooling

G8423-03

G8423-05

G8373-01

G8373-03

G5853-103

G5853-11

G5853-13

G5853-203

G5853-21

G5853-23

➀

➁

➂

TO-18

TO-5

TO-8

Non-cooled

-40 to +85

-55 to +125

One-stage

TE-cooled

Two-stage

TE-cooled

1.5

0.2

1.0

-40 to +70

-55 to +85

➃

TO-8

Electrical and optical characteristics (Typ. unless otherwise noted)

M easure ment

Spectral

Peak

Photo

condition

response sensitivity sensitivity

wavelength

range

Element

temperature

λp

λ=λp

(°C)

G8423-03

G8423-05

G8373-01

G8373-03

G5853-103

G5853-11

G5853-13

G5853-203

G5853-21

G5853-23

(µm)

1.2 to 2.6

(µm)

Min. Typ.

(A/W) (A/W)

Dark current

=1 V

Typ.

(µA)

150

0.2

1.5

0.1

0.8

7.5

Max.

(µA)

1500

7.5

150

Cut-off

frequency

=1 V

=50

Ω

-3 dB

(MHz)

1.5

Terminal

capacitance Shunt

resistance

Rsh

=1 V V

= 10 m V

f=1 MHz

(pF)

200

1800

200

1800

200

1800

(kΩ)

0.3

300

600

∗

λ=λp

NEP

λ=λp

Type No.

-10

1.2 to 2.57

2.3

0.9

1.3

-20

1.2 to 2.55

(c m· Hz

1/2

/ W) (W/Hz

1/2

)

7 × 10

-13

1 × 10

-12

5 × 10

2 × 10

-12

8 × 10

-12

3 × 10

-13

1 × 10

7 × 10

-13

2 × 10

-12

2 × 10

-13

2 × 10

5 × 10

-13

1.8 × 10

-12

G8423/G8373/G5853 series may be damaged by Electro Static Discharge, etc. Be carefull when using

G8423/G8373/G5853 series.

G5853-11 Related Products

	G5853-11	G8423-05	G8423-03	G8423_06	G5853-23	G5853-21	G5853-203	G5853-13	G5853-103
Description	InGaAs PIN photodiode	InGaAs PIN photodiode	InGaAs PIN photodiode	InGaAs PIN photodiode	InGaAs PIN photodiode	InGaAs PIN photodiode	InGaAs PIN photodiode	InGaAs PIN photodiode	InGaAs PIN photodiode
Is it lead-free?	Contains lead	Contains lead	Contains lead	-	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Maker	Hamamatsu	Hamamatsu	Hamamatsu	-	Hamamatsu	Hamamatsu	Hamamatsu	Hamamatsu	Hamamatsu
package instruction	TO-8, 6 PIN	TO-18, 3 PIN	TO-18, 3 PIN	-	TO-8, 6 PIN	TO-8, 6 PIN	TO-8, 6 PIN	TO-8, 6 PIN	TO-8, 6 PIN
Reach Compliance Code	unknow	unknown	unknow	-	unknow	unknow	unknow	unknow	unknown
Configuration	SINGLE	SINGLE	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum dark power	7500 nA	50000 nA	20000 nA	-	75000 nA	4000 nA	1000 nA	150000 nA	2000 nA
Infrared range	YES	YES	YES	-	YES	YES	YES	YES	YES
Installation features	THROUGH HOLE MOUNT	THROUGH HOLE MOUNT	THROUGH HOLE MOUNT	-	THROUGH HOLE MOUNT	THROUGH HOLE MOUNT	THROUGH HOLE MOUNT	THROUGH HOLE MOUNT	THROUGH HOLE MOUNT
Number of functions	1	1	1	-	1	1	1	1	1
Maximum operating temperature	70 °C	85 °C	85 °C	-	70 °C	70 °C	70 °C	70 °C	70 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
Optoelectronic device types	PIN PHOTODIODE	PIN PHOTODIODE	PIN PHOTODIODE	-	PIN PHOTODIODE	PIN PHOTODIODE	PIN PHOTODIODE	PIN PHOTODIODE	PIN PHOTODIODE
peak wavelength	2300 nm	2300 nm	2300 nm	-	2300 nm	2300 nm	2300 nm	2300 nm	2300 nm
Minimum reverse breakdown voltage	2 V	2 V	2 V	-	2 V	2 V	2 V	2 V	2 V
Semiconductor material	InGaAs	InGaAs	InGaAs	-	InGaAs	InGaAs	InGaAs	InGaAs	InGaAs
shape	ROUND	ROUND	ROUND	-	ROUND	ROUND	ROUND	ROUND	ROUND
size	1 mm	0.5 mm	0.3 mm	-	3 mm	1 mm	0.3 mm	3 mm	0.3 mm
surface mount	NO	NO	NO	-	NO	NO	NO	NO	NO
Base Number Matches	1	1	-	-	-	1	1	-	1
Maximum reverse voltage	-	2 V	2 V	-	2 V	-	2 V	2 V	2 V

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