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G5853-103

Description
InGaAs PIN photodiode
CategoryLED optoelectronic/LED    photoelectric   
File Size215KB,4 Pages
ManufacturerHamamatsu
Websitehttp://www.hamamatsu.com
Download Datasheet Parametric Compare View All

G5853-103 Overview

InGaAs PIN photodiode

G5853-103 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
MakerHamamatsu
package instructionTO-8, 6 PIN
Reach Compliance Codeunknown
ConfigurationSINGLE
Maximum dark power2000 nA
Infrared rangeYES
Installation featuresTHROUGH HOLE MOUNT
Number of functions1
Maximum operating temperature70 °C
Minimum operating temperature-40 °C
Optoelectronic device typesPIN PHOTODIODE
peak wavelength2300 nm
Minimum reverse breakdown voltage2 V
Maximum reverse voltage2 V
Semiconductor materialInGaAs
shapeROUND
size0.3 mm
surface mountNO
Base Number Matches1
PHOTODIODE
InGaAs PIN photodiode
G8423/G8373/G5853 series
Long wavelength type (up to 2.6 µm)
Features
Applications
l
Long cut-off wavelength: 2.6 µm
l
Gas analysis
l
3-pin TO-18 package: low price
l
Spectrophotometer
l
Thermoelectrically cooled TO-8 package: low dark current
l
NIR (near infrared) photometry
l
Active area:
φ0.3
to
φ3
mm
Accessories (Optional)
s
Specifications / Absolute maximum ratings
Di mensional
Package
outline
Active
area
(mm)
φ0.3
φ0.5
φ1
φ3
φ0.3
φ1
φ3
φ0.3
φ1
φ3
l
Heatsink for one-stage TE-cooled type A3179
l
Heatsink for two-stage TE-cooled type A3179-01
l
Temperature controller for TE-cooled type C1103-04
Thermistor
power
dissipation
(mW)
Absolute maximum ratings
TE-cooler Reverse Operating
Storage
allowable voltage temperature temperature
current
V
R
Topr
Tstg
(A)
(V)
(°C)
(°C)
Type No.
Cooling
G8423-03
G8423-05
G8373-01
G8373-03
G5853-103
G5853-11
G5853-13
G5853-203
G5853-21
G5853-23
TO-18
TO-5
TO-8
Non-cooled
-
-
-40 to +85
-55 to +125
One-stage
TE-cooled
Two-stage
TE-cooled
1.5
0.2
1.0
2
-40 to +70
-55 to +85
TO-8
s
Electrical and optical characteristics (Typ. unless otherwise noted)
M easure ment
Spectral
Peak
Photo
condition
response sensitivity sensitivity
wavelength
S
range
Element
temperature
λp
λ=λp
λ
(°C)
G8423-03
G8423-05
G8373-01
G8373-03
G5853-103
G5853-11
G5853-13
G5853-203
G5853-21
G5853-23
25
(µm)
1.2 to 2.6
(µm)
Min. Typ.
(A/W) (A/W)
Dark current
I
D
V
R
=1 V
Typ.
(µA)
2
5
15
150
0.2
1.5
15
0.1
0.8
7.5
Max.
(µA)
20
50
75
1500
2
7.5
150
1
4
75
Cut-off
frequency
fc
V
R
=1 V
R
L
=50
-3 dB
(MHz)
60
50
15
1.5
60
15
1.5
60
15
1.5
Terminal
capacitance Shunt
resistance
Ct
Rsh
V
R
=1 V V
R
= 10 m V
f=1 MHz
(pF)
40
60
200
1800
40
200
1800
40
200
1800
(kΩ)
30
15
3
0.3
300
30
3
600
60
6
D
λ=λp
NEP
λ=λp
Type No.
-10
1.2 to 2.57
2.3
0.9
1.3
-20
1.2 to 2.55
(c m· Hz
1/2
/ W) (W/Hz
1/2
)
7 × 10
-13
1 × 10
-12
10
5 × 10
2 × 10
-12
8 × 10
-12
3 × 10
-13
1 × 10
11
7 × 10
-13
2 × 10
-12
2 × 10
-13
2 × 10
11
5 × 10
-13
1.8 × 10
-12
G8423/G8373/G5853 series may be damaged by Electro Static Discharge, etc. Be carefull when using
G8423/G8373/G5853 series.
1

G5853-103 Related Products

G5853-103 G8423-05 G8423-03 G8423_06 G5853-23 G5853-21 G5853-203 G5853-13 G5853-11
Description InGaAs PIN photodiode InGaAs PIN photodiode InGaAs PIN photodiode InGaAs PIN photodiode InGaAs PIN photodiode InGaAs PIN photodiode InGaAs PIN photodiode InGaAs PIN photodiode InGaAs PIN photodiode
Is it lead-free? Contains lead Contains lead Contains lead - Contains lead Contains lead Contains lead Contains lead Contains lead
Maker Hamamatsu Hamamatsu Hamamatsu - Hamamatsu Hamamatsu Hamamatsu Hamamatsu Hamamatsu
package instruction TO-8, 6 PIN TO-18, 3 PIN TO-18, 3 PIN - TO-8, 6 PIN TO-8, 6 PIN TO-8, 6 PIN TO-8, 6 PIN TO-8, 6 PIN
Reach Compliance Code unknown unknown unknow - unknow unknow unknow unknow unknow
Configuration SINGLE SINGLE SINGLE - SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum dark power 2000 nA 50000 nA 20000 nA - 75000 nA 4000 nA 1000 nA 150000 nA 7500 nA
Infrared range YES YES YES - YES YES YES YES YES
Installation features THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT - THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT
Number of functions 1 1 1 - 1 1 1 1 1
Maximum operating temperature 70 °C 85 °C 85 °C - 70 °C 70 °C 70 °C 70 °C 70 °C
Minimum operating temperature -40 °C -40 °C -40 °C - -40 °C -40 °C -40 °C -40 °C -40 °C
Optoelectronic device types PIN PHOTODIODE PIN PHOTODIODE PIN PHOTODIODE - PIN PHOTODIODE PIN PHOTODIODE PIN PHOTODIODE PIN PHOTODIODE PIN PHOTODIODE
peak wavelength 2300 nm 2300 nm 2300 nm - 2300 nm 2300 nm 2300 nm 2300 nm 2300 nm
Minimum reverse breakdown voltage 2 V 2 V 2 V - 2 V 2 V 2 V 2 V 2 V
Maximum reverse voltage 2 V 2 V 2 V - 2 V - 2 V 2 V -
Semiconductor material InGaAs InGaAs InGaAs - InGaAs InGaAs InGaAs InGaAs InGaAs
shape ROUND ROUND ROUND - ROUND ROUND ROUND ROUND ROUND
size 0.3 mm 0.5 mm 0.3 mm - 3 mm 1 mm 0.3 mm 3 mm 1 mm
surface mount NO NO NO - NO NO NO NO NO
Base Number Matches 1 1 - - - 1 1 - 1
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