MOSFET MV POWER MOS
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | conform to |
| Maker | Infineon |
| package instruction | SMALL OUTLINE, R-PDSO-F5 |
| Contacts | 8 |
| Reach Compliance Code | not_compliant |
| ECCN code | EAR99 |
| Factory Lead Time | 26 weeks |
| Avalanche Energy Efficiency Rating (Eas) | 60 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V |
| Maximum drain current (ID) | 8.5 A |
| Maximum drain-source on-resistance | 0.0196 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PDSO-F5 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 5 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 164 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Tin (Sn) |
| Terminal form | FLAT |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
!
! %
T ? @5B 9 D
' , !
T
1>4 $ ,
| BSC196N10NSGATMA1 | BSC196N10NS G | BSC196N10NSGXT | |
|---|---|---|---|
| Description | MOSFET MV POWER MOS | mosfet optimos 2 pwr transt 100v 45a | Power Field-Effect Transistor, 8.5A I(D), 100V, 0.0196ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 |
| Is it Rohs certified? | conform to | - | conform to |
| Maker | Infineon | - | Infineon |
| package instruction | SMALL OUTLINE, R-PDSO-F5 | - | SMALL OUTLINE, R-PDSO-F5 |
| Reach Compliance Code | not_compliant | - | compliant |
| ECCN code | EAR99 | - | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 60 mJ | - | 60 mJ |
| Shell connection | DRAIN | - | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V | - | 100 V |
| Maximum drain current (ID) | 8.5 A | - | 8.5 A |
| Maximum drain-source on-resistance | 0.0196 Ω | - | 0.0196 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PDSO-F5 | - | R-PDSO-F5 |
| Number of components | 1 | - | 1 |
| Number of terminals | 5 | - | 5 |
| Operating mode | ENHANCEMENT MODE | - | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY | - | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | - | RECTANGULAR |
| Package form | SMALL OUTLINE | - | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | - | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | - | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 164 A | - | 164 A |
| surface mount | YES | - | YES |
| Terminal form | FLAT | - | FLAT |
| Terminal location | DUAL | - | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED | - | NOT SPECIFIED |
| transistor applications | SWITCHING | - | SWITCHING |
| Transistor component materials | SILICON | - | SILICON |
京公网安备 11010802033920号
EEWORLD
