uct family. Using the ultra-high density proprietary
TrenchDMOS technology, this product demon-
strates high power handling and small size.
AAT9055
Features
•
•
•
•
PWMSwitch
™
V
DS(MAX)
= 30V
I
D(MAX)
1
= 12 A @ T
C
= 25°C
I
APP(MAX)
= 6A in typical computer application
Low R
DS(ON)
:
• 56 mΩ @V
GS
= 10V
• 90 mΩ @V
GS
= 4.5V
Applications
•
•
•
DC-DC converters
High current load switches
LDO output
DPAK Package
Drain-Connected Tab
Preliminary Information
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
(T
C
=25°C unless otherwise noted)
Value
30
±20
±12
±10
±16
12
22
14
-55 to 150
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
J
=150°C
1
Units
V
T
C
= 25°C
T
C
= 70°C
Pulsed Drain Current
3
Continuous Source Current (Source-Drain Diode)
1
T
C
= 25°C
Maximum Power Dissipation
1
T
C
= 70°C
Operating Junction and Storage Temperature Range
A
W
°C
Thermal Characteristics
Symbol
R
θJA
R
TYP
R
θJC
Description
Maximum Junction-to-Ambient
Typical Junction to ambient on PC board
Maximum Junction-to-Case
2
Value
100
28
5.5
Units
°C/W
°C/W
°C/W
9055.2003.04.0.61
1
30V N-Channel Power MOSFET
Electrical Characteristics
Symbol
Description
(T
J
=25°C unless otherwise noted)
Conditions
V
GS
=0V, I
D
=250µA
V
GS
=10V, I
D
=12A
V
GS
=4.5V, I
D
=10A
V
GS
=10V, V
DS
=5V (Pulsed)
V
GS
=V
DS
, I
D
=250µA
V
GS
=±20V, V
DS
=0V
V
GS
=0V,V
DS
=30V
V
GS
=0V,V
DS
=30V, T
J
=70°C
V
DS
=5V, I
D
=4A
V
DS
=15V, R
D
=2.5Ω, V
GS
=5V
V
DS
=15V, R
D
=2.5Ω, V
GS
=10V
V
DS
=15V, R
D
=2.5Ω, V
GS
=10V
V
DS
=15V, R
D
=2.5Ω, V
GS
=10V
V
DD
=15V, R
D
=2.5Ω, V
GS
=10V,
V
DD
=15V, R
D
=2.5Ω, V
GS
=10V,
V
DD
=15V, R
D
=2.5Ω, V
GS
=10V,
V
DD
=15V, R
D
=2.5Ω, V
GS
=10V,
3
AAT9055
Min
30
Typ
Max
Units
V
DC Characteristics
BV
DSS
Drain-Source Breakdown Voltage
R
DS(ON)
I
D(ON)
V
GS(th)
I
GSS
I
DSS
Drain-Source ON-Resistance
On-State Drain Current
3
Gate Threshold Voltage
Gate-Body Leakage Current
Drain Source Leakage Current
3
44
68
16
1.0
56
90
mΩ
A
V
nA
µA
S
±100
1
25
6
4.2
7.7
1.35
1.2
2.5
2.6
12
5.7
1.2
1.5
12
g
fs
Forward Transconductance
3
Dynamic Characteristics
4
Q
G
Total Gate Charge
Q
GT
Total Gate Charge
Q
GS
Gate-Source Charge
Q
GD
Gate-Drain Charge
t
D(ON)
Turn-ON Delay
t
R
Turn-ON Rise Time
t
D(OFF)
Turn-OFF Delay
t
F
Turn-OFF Fall Time
Source-Drain Diode Characteristics
V
SD
Source-Drain Forward Voltage
I
S
Continuous Diode Current
1
Notes:
nC
R
G
=6Ω
R
G
=6Ω
R
G
=6Ω
R
G
=6Ω
ns
V
GS
=0, I
S
=12A
V
A
1. Based on thermal dissipation from junction to case. R
θJC
+ R
θCA
= R
θJA
where the case thermal reference is defined as the solder
mounting surface of the drain tab. R
θJC
is guaranteed by design, however R
θCA
is determined by the PCB design. Package current is
limited to 8A DC and 16A pulsed.
2. Mounted on typical computer main board.
3. Pulse measurement 300 µs.
4. Guaranteed by design. Not subject to production testing.
2
9055.2003.04.0.61
30V N-Channel Power MOSFET
Typical Characteristics
Output Characteristics
16
AAT9055
Transfer Characteristics
16
10V
12
5V
6V
4.5V
12
V
D
=V
G
-55°C
25°C
125°C
I
DS
(A)
8
I
D
(A)
4V
3.5V
3V
8
4
4
0
0
3
4
0
1
2
0
1
2
3
4
5
V
DS
(V)
V
GS
(V)
On-Resistance vs. Drain Current
120
100
100
80
On-Resistance vs. Gate to Source Voltage
R
DS(ON)
(mΩ)
R
DS(ON)
(mΩ)
80
I
D
= 10A
60
V
GS
= 4.5V
60
40
20
0
0
4
8
12
16
2V
40
20
0
0
2
4
6
8
10
V
GS
= 10V
I
D
(A)
V
GS
(V)
Gate Charge
10
8
6
4
2
0
0
2
4
6
8
10
0.1
0.4
Source-Drain Diode Forward Voltage
100
V
D
=15V
R
D
=2.5Ω
10
T
J
= 150°C
V
GS
(V)
I
S
(A)
1
T
J
= 25°C
0.6
0.8
1
1.2
1.4
Q
G
, Charge (nC)
V
SD
(V)
9055.2003.04.0.61
3
30V N-Channel Power MOSFET
Ordering Information
Package
TO-252 (DPAK)
Marking
9055
Part Number (Tape and Reel)
AAT9055INY-T1
AAT9055
Note: Sample stock is generally held on all part numbers listed in
BOLD.
Package Information
TO-252 (DPAK)
6.54
±
0.19
5.205
±
0.255
9.855
±
0.555
5.775
±
0.445
1.46
±
0.57
7.5°
±
7.5°
2.285
±
0.105
0.83
±
0.19
2.67 REF
2.29 BSC
1.145
0.72
±
0.17
0.58
±
0.13
0.13
1.59
±
0.19
All measurements in millimeters.
AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work
rights, or other intellectual property rights are implied.
AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest
version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale
supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability.
AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech’s standard warranty. Testing and
other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
京公网安备 11010802033920号
EEWORLD
