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AAT9055INY-T1

Description
30V N-Channel Power MOSFET
File Size112KB,4 Pages
ManufacturerAnalogicTech
Websitehttp://www.analogictech.com/
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AAT9055INY-T1 Overview

30V N-Channel Power MOSFET

30V N-Channel Power MOSFET
General Description
The AAT9055 30 V N-Channel Power MOSFET is a
member of AnalogicTech™'s TrenchDMOS™ prod-
uct family. Using the ultra-high density proprietary
TrenchDMOS technology, this product demon-
strates high power handling and small size.
AAT9055
Features
PWMSwitch
V
DS(MAX)
= 30V
I
D(MAX)
1
= 12 A @ T
C
= 25°C
I
APP(MAX)
= 6A in typical computer application
Low R
DS(ON)
:
• 56 mΩ @V
GS
= 10V
• 90 mΩ @V
GS
= 4.5V
Applications
DC-DC converters
High current load switches
LDO output
DPAK Package
Drain-Connected Tab
Preliminary Information
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
(T
C
=25°C unless otherwise noted)
Value
30
±20
±12
±10
±16
12
22
14
-55 to 150
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
J
=150°C
1
Units
V
T
C
= 25°C
T
C
= 70°C
Pulsed Drain Current
3
Continuous Source Current (Source-Drain Diode)
1
T
C
= 25°C
Maximum Power Dissipation
1
T
C
= 70°C
Operating Junction and Storage Temperature Range
A
W
°C
Thermal Characteristics
Symbol
R
θJA
R
TYP
R
θJC
Description
Maximum Junction-to-Ambient
Typical Junction to ambient on PC board
Maximum Junction-to-Case
2
Value
100
28
5.5
Units
°C/W
°C/W
°C/W
9055.2003.04.0.61
1

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