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BCR158E6327HTSA1

Description
Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size833KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR

BCR158E6327HTSA1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 21.3636
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)70
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Base Number Matches1
BCR158...
PNP Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R
1
=2.2 kΩ,
R
2
=47 kΩ)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
BCR158
BCR158W
C
3
R
1
R
2
1
B
2
E
EHA07183
Type
BCR158
BCR158W
Marking
WIs
WIs
1=B
1=B
Pin Configuration
2=E
2=E
3=C
3=C
-
-
-
-
-
-
Package
SOT23
SOT323
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
Collector current
Total power dissipation-
BCR158,
T
S
102°C
BCR158W,
T
S
124°C
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CEO
V
CBO
V
i(fwd)
V
i(rev)
I
C
P
tot
200
250
150
-65 ... 150
°C
Value
50
50
20
5
100
mA
mW
Unit
V
1
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