EEWORLDEEWORLDEEWORLD

Part Number

Search

ZVN0124ASTZ

Description
MOSFET N-Chnl 240V
CategoryDiscrete semiconductor    The transistor   
File Size80KB,3 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
Download Datasheet Parametric Compare View All

ZVN0124ASTZ Online Shopping

Suppliers Part Number Price MOQ In stock  
ZVN0124ASTZ - - View Buy Now

ZVN0124ASTZ Overview

MOSFET N-Chnl 240V

ZVN0124ASTZ Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerDiodes Incorporated
Parts packaging codeTO-92
package instructionTO-92 COMPATIBLE, E-LINE PACKAGE-3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage240 V
Maximum drain current (ID)0.16 A
Maximum drain-source on-resistance16 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSIP-W3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 1 – MARCH 94
FEATURES
* 240 Volt V
DS
* R
DS(on)
=16Ω
APPLICATIONS
* Telephone handsets
ZVN0124A
D
G
S
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
240
160
2
±
20
700
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
240
1
3
20
10
100
500
16
100
85
20
7
7
8
16
8
MAX.
UNIT CONDITIONS.
V
V
nA
µA
µA
mA
mS
pF
pF
pF
ns
ns
ns
ns
V
DD
≈25V,
I
D
=250mA
V
DS
=25 V, V
GS
=0V, f=1MHz
I
D
=1mA, V
GS
=0V
ID=1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=240 V, V
GS
=0
V
DS
=192 V, V
GS
=0V,
T=125°C
(2)
V
DS
=25 V, V
GS
=10V
V
GS
=10V,I
D
=250mA
V
DS
=25V,I
D
=250mA
I
D(on)
Static Drain-Source On-State R
DS(on)
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%
(2) Sample test.
3-350
(
3

ZVN0124ASTZ Related Products

ZVN0124ASTZ ZVN0124ZSTZ ZVN0124ASTOA
Description MOSFET N-Chnl 240V MOSFET VMOS N Channel MOSFET N-Chnl 240V
Configuration SINGLE Single SINGLE
Is it Rohs certified? conform to - conform to
Maker Diodes Incorporated - Diodes Incorporated
Parts packaging code TO-92 - TO-92
package instruction TO-92 COMPATIBLE, E-LINE PACKAGE-3 - IN-LINE, R-PSIP-W3
Contacts 3 - 3
Reach Compliance Code compliant - unknown
ECCN code EAR99 - EAR99
Minimum drain-source breakdown voltage 240 V - 240 V
Maximum drain current (ID) 0.16 A - 0.16 A
Maximum drain-source on-resistance 16 Ω - 16 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSIP-W3 - R-PSIP-W3
JESD-609 code e3 - e3
Number of components 1 - 1
Number of terminals 3 - 3
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form IN-LINE - IN-LINE
Peak Reflow Temperature (Celsius) 260 - 260
Polarity/channel type N-CHANNEL - N-CHANNEL
Certification status Not Qualified - Not Qualified
surface mount NO - NO
Terminal surface Matte Tin (Sn) - Matte Tin (Sn)
Terminal form WIRE - WIRE
Terminal location SINGLE - SINGLE
Maximum time at peak reflow temperature 40 - 40
transistor applications SWITCHING - SWITCHING
Transistor component materials SILICON - SILICON
A very practical summary! One article covers all rectifier and filter circuits
Basic circuit:Generally, DC stabilized power supplies use 220V mains electricity as power supply, which is then transmitted to the voltage stabilizer circuit for voltage stabilization after voltage tr...
eric_wang Power technology
What functions can be achieved by transplanting ucos2 to 32
UCOS2 is a relatively simple and easy-to-master operating system in embedded operating systems. I learned WinCE5.0 in school and read books related to Linux and UCOS2, but I still have to do these thi...
xinjitmzy stm32/stm8
Cadence hybrid simulation error
I am doing spectreVerilog mixed simulation under Cadence , but an Error: problem encountered while executing verilog appears . However, I checked and found that my version of verilog has been installe...
eeleader FPGA/CPLD
諮詢數字電源的情況
一年過去了,不知道論壇的數字電源進展如何了,一直等著論壇的DIY電源,等了一年了,好像最近沒動靜了?:titter:...
眼大5子 DIY/Open Source Hardware
The principle of RC charging temperature measurement
I saw this document today, which talks about using the charging and discharging characteristics of RC circuits to detect temperature. It is very beneficial, so I posted it here for your reference. The...
shower.xu Microcontroller MCU
64bit windows 7 VMWare+ 64bit Ubuntu12.04 uboot, kernel, android compilation environment...
[i=s]This post was last edited by Wince.Android on 2014-1-15 00:01[/i] [p=26, null, left][color=#000][font=Arial][size=14px]1. Development environment setup tutorial[/size][/font][/color][/p][p=26, nu...
Wince.Android Embedded System

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1207  2842  1647  1987  2155  25  58  34  41  44 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号