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BYT52A-TAP

Description
Rectifiers 1.4 Amp 50 Volt 50 Amp IFSM
CategoryDiscrete semiconductor    diode   
File Size119KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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BYT52A-TAP Overview

Rectifiers 1.4 Amp 50 Volt 50 Amp IFSM

BYT52A-TAP Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerVishay
package instructionE-LALF-W2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JESD-30 codeE-LALF-W2
JESD-609 codee2
Humidity sensitivity level1
Maximum non-repetitive peak forward current50 A
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current0.85 A
Package body materialGLASS
Package shapeELLIPTICAL
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage50 V
Maximum reverse recovery time0.2 µs
surface mountNO
technologyAVALANCHE
Terminal surfaceTin/Silver (Sn/Ag)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M
www.vishay.com
Vishay Semiconductors
Fast Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• Soft recovery characteristics
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
949539
APPLICATIONS
• Fast rectification and switching diode
MECHANICAL DATA
Case:
SOD-57
Terminals:
plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity:
color band denotes cathode end
Mounting position:
any
Weight:
approx. 369 mg
ORDERING INFORMATION
(Example)
DEVICE NAME
BYT52M
BYT52M
ORDERING CODE
BYT52M-TR
BYT52M-TAP
TAPED UNITS
5000 per 10" tape and reel
5000 per ammopack
MINIMUM ORDER QUANTITY
25 000
25 000
PARTS TABLE
PART
BYT52A
BYT52B
BYT52D
BYT52G
BYT52J
BYT52K
BYT52M
TYPE DIFFERENTIATION
V
R
= 50 V; I
F(AV)
= 1.4 A
V
R
= 100 V; I
F(AV)
= 1.4 A
V
R
= 200 V; I
F(AV)
= 1.4 A
V
R
= 400 V; I
F(AV)
= 1.4 A
V
R
= 600 V; I
F(AV)
= 1.4 A
V
R
= 800 V; I
F(AV)
= 1.4 A
V
R
= 1000 V; I
F(AV)
= 1.4 A
PACKAGE
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
BYT52A
BYT52B
BYT52D
BYT52G
BYT52J
BYT52K
BYT52M
SYMBOL
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
F(AV)
I
F(AV)
E
R
E
R
E
R
T
j
= T
stg
VALUE
50
100
200
400
600
800
1000
50
0.85
1.4
10
10
10
- 55 to + 175
UNIT
V
V
V
V
V
V
V
A
A
A
mJ
mJ
mJ
°C
Reverse voltage = repetitive peak reverse
voltage
See electrical characteristics
Peak forward surge current
Average forward current
t
p
= 10 ms, half sine wave
On PC board
l = 10 mm
I
(BR)R
= 0.4 A
BYT52J
BYT52K
BYT52M
Non repetitive reverse avalanche energy
Junction and storage temperature range
Rev. 1.8, 11-Sep-12
Document Number: 86029
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

BYT52A-TAP Related Products

BYT52A-TAP BYT52B-TAP BYT52G-TR BYT52J-TAP
Description Rectifiers 1.4 Amp 50 Volt 50 Amp IFSM Rectifiers 1.4 Amp 100 Volt 50 Amp IFSM Rectifiers 1.4 Amp 400 Volt 50 Amp IFSM Rectifiers 1.4 Amp 600 Volt 50 Amp IFSM
Is it lead-free? Lead free Lead free Lead free Lead free
Maker Vishay Vishay Vishay Vishay
package instruction E-LALF-W2 E-LALF-W2 E-LALF-W2 E-LALF-W2
Contacts 2 2 2 2
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.3 V 1.3 V 1.3 V 1.3 V
JESD-30 code E-LALF-W2 E-LALF-W2 E-LALF-W2 E-LALF-W2
JESD-609 code e2 e2 e2 e2
Humidity sensitivity level 1 1 1 1
Maximum non-repetitive peak forward current 50 A 50 A 50 A 50 A
Number of components 1 1 1 1
Number of terminals 2 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C
Maximum output current 0.85 A 0.85 A 0.85 A 0.85 A
Package body material GLASS GLASS GLASS GLASS
Package shape ELLIPTICAL ELLIPTICAL ELLIPTICAL ELLIPTICAL
Package form LONG FORM LONG FORM LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 50 V 100 V 400 V 600 V
Maximum reverse recovery time 0.2 µs 0.2 µs 0.2 µs 0.2 µs
surface mount NO NO NO NO
technology AVALANCHE AVALANCHE AVALANCHE AVALANCHE
Terminal surface Tin/Silver (Sn/Ag) Tin/Silver (Sn/Ag) Tin/Silver (Sn/Ag) Tin/Silver (Sn/Ag)
Terminal form WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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