BC857BF...BC860BF
PNP Silicon AF Transistor
•
For AF input stages and driver applications
•
High current gain
•
Low collector-emitter saturation voltage
•
Low noise between 30 Hz and 15 kHz
•
Complementary types: BC847BF, BC848BF
BC849BF, BC850BF (NPN)
Type
Marking
Pin Configuration
Package
3
1
2
BC857BF
BC858BF
BC859BF
BC860BF
Maximum Ratings
Parameter
Collector-emitter voltage
BC857BF, BC860BF
BC858BF, BC859BF
Collector-emitter voltage
BC857BF, BC860BF
BC858BF, BC859BF
Collector-base voltage
BC857BF, BC860BF
BC858BF, BC859BF
Emitter-base voltage
BC857BF, BC860BF
BC858BF, BC859BF
Collector current
Peak collector current
Peak base current
Peak emitter current
3Fs
3Ks
4Bs
4Fs
1=B
1=B
1=B
1=B
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
TSFP-3
TSFP-3
TSFP-3
TSFP-3
Symbol
V
CEO
Value
45
30
Unit
V
V
CES
50
30
V
CBO
50
30
V
EBO
5
5
I
C
I
CM
I
BM
I
EM
P
tot
T
j
T
stg
1
100
200
200
200
250
150
-65 ... 150
mA
mA
mW
°C
Total power dissipation,
T
S
≤
128°C
Junction temperature
Storage temperature
Jun-16-2004
BC857BF...BC860BF
Thermal Resistance
Parameter
Junction - soldering point
1)
Symbol
R
thJS
Value
≤
90
Unit
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V
(BR)CEO
V
I
C
= 10 mA,
I
B
= 0 mA, BC857BF, BC860BF
I
C
= 10 mA,
I
B
= 0 mA, BC858BF, BC859BF
45
30
V
(BR)CBO
-
-
-
-
-
-
-
-
-
-
-
-
-
-
µA
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0 mA, BC857BF, BC860BF
I
C
= 10 µA,
I
E
= 0 mA, BC858BF, BC859BF
50
30
V
(BR)CES
Collector-emitter breakdown voltage
I
C
= 10 µA,
V
BE
= 0 V, BC857BF, BC860BF
I
C
= 10 µA,
V
BE
= 0 V, BC858BF, BC859BF
50
30
V
(BR)EBO
I
CBO
Emitter-base breakdown voltage
I
E
= 1 µA,
I
C
= 0 µA
5
Collector-base cutoff current
V
CB
= 30 V,
I
E
= 0 A
V
CB
= 30 V,
I
E
= 0 A,
T
A
= 150 °C
-
-
h
FE
-
-
250
290
75
250
700
850
650
-
0.015
5
-
-
475
mV
300
650
-
-
750
820
DC current gain
2)
I
C
= 10 µA,
V
CE
= 5 V
I
C
= 2 mA,
V
CE
= 5 V
-
220
V
CEsat
Collector-emitter saturation voltage
2)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
-
-
V
BEsat
Base emitter saturation voltage
2)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
-
-
V
BE(ON)
Base-emitter voltage
2)
I
C
= 2 mA,
V
CE
= 5 V
I
C
= 10 mA,
V
CE
= 5 V
2
Pulse test: t < 300µs; D < 2%
600
-
1
For calculation of
R
thJA
please refer to Application Note Thermal Resistance
2
Jun-16-2004
BC857BF...BC860BF
AC Characteristics
Transition frequency
I
C
= 20 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
Short-circuit input impedance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
Open-circuit reverse voltage transf. ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
Short-circuit forward current transf. ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
Open-circuit output admittance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
Noise figure
I
C
= 200 µA,
V
CE
= 5 V,
f
= 1 kHz,
∆
f = 200
Hz,
R
S
= 2
kΩ,
BC859BF
I
C
= 200 µA,
V
CE
= 5 V,
f
= 1 kHz,
∆
f = 200
Hz,
R
S
= 2
kΩ,
BC860BF
Equivalent noise voltage
I
C
= 200 µA,
V
CE
= 5 V,
R
S
= 2
kΩ,
f
= 10...50 Hz , BF860BF
V
n
-
-
1
-
4
0.11
µV
-
1
4
F
dB
h
22e
-
30
-
µS
h
21e
-
330
-
-
h
12e
-
2
-
10
-4
h
11e
-
4.5
-
kΩ
C
eb
-
10
-
C
cb
-
3
-
pF
f
T
-
250
-
MHz
3
Jun-16-2004
BC857BF...BC860BF
DC current gain
h
FE
=
ƒ(I
C
)
V
CE
= 5 V
10
3
EHP00382
Collector-emitter saturation voltage
I
C
=
ƒ(V
CEsat
),
h
FE
= 20
10
2
EHP00380
h
FE
5
100 C
25 C
Ι
C
mA
100 C
25 C
-50 C
10
2
5
-50 C
10
1
5
10
1
5
10
5
0
10
0
10
-2
5 10
-1
5 10
0
5 10
1
mA 10
2
10
-1
0
0.1
0.2
0.3
0.4
V 0.5
V
CEsat
Ι
C
Base-emitter saturation voltage
I
C
=
ƒ(V
BEsat
),
h
FE
= 20
10
2
mA
EHP00379
Collector cutoff current
I
CBO
=
ƒ(T
A
)
V
CB
= 30 V
10
4
nA
EHP00381
Ι
C
100 C
25 C
-50C
Ι
CB0
10
3
5
10
2
5
10
1
5
10
5
0
10
5
1
max
typ
10
0
5
10
-1
10
-1
0
0.2
0.4
0.6
0.8
V
1.2
V
BEsat
0
50
100
C
T
A
150
4
Jun-16-2004
BC857BF...BC860BF
Transition frequency
f
T
=
ƒ(I
C
)
V
CE
= 5 V
10
3
MHz
EHP00378
Collector-base capacitance
C
CB
=
ƒ
(V
CB0
)
Emitter-base capacitance
C
EB
=
ƒ
(V
EB0
)
BC 856...860
EHP00376
f
T
5
C
CB0
(
C
EB0
)
12
pF
10
8
C
EBO
10
2
6
5
4
C
CBO
2
10
1
10
-1
5 10
0
5
10
1
mA
10
2
0
10
-1
5
10
0
V
V
CB0
Ι
C
10
1
(
V
EB0
)
Total power dissipation
P
tot
=
ƒ(T
S
)
Permissible Pulse Load
R
thJS
=
ƒ(t
p
)
300
10
2
mW
K/W
P
tot
200
10
1
150
100
10
0
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
50
R
thJS
0
0
20
40
60
80
100
120
°C
150
10
-1 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
T
S
t
p
5
Jun-16-2004
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