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BC860BF

Description
High Speed CMOS Logic Octal Positive-Edge Triggered D-Type Flip-Flops with 3-State Outputs 20-SOIC -55 to 125
CategoryDiscrete semiconductor    The transistor   
File Size164KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BC860BF Overview

High Speed CMOS Logic Octal Positive-Edge Triggered D-Type Flip-Flops with 3-State Outputs 20-SOIC -55 to 125

BC860BF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)220
JESD-30 codeR-PDSO-F3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.25 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
BC857BF...BC860BF
PNP Silicon AF Transistor
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BC847BF, BC848BF
BC849BF, BC850BF (NPN)
Type
Marking
Pin Configuration
Package
3
1
2
BC857BF
BC858BF
BC859BF
BC860BF
Maximum Ratings
Parameter
Collector-emitter voltage
BC857BF, BC860BF
BC858BF, BC859BF
Collector-emitter voltage
BC857BF, BC860BF
BC858BF, BC859BF
Collector-base voltage
BC857BF, BC860BF
BC858BF, BC859BF
Emitter-base voltage
BC857BF, BC860BF
BC858BF, BC859BF
Collector current
Peak collector current
Peak base current
Peak emitter current
3Fs
3Ks
4Bs
4Fs
1=B
1=B
1=B
1=B
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
TSFP-3
TSFP-3
TSFP-3
TSFP-3
Symbol
V
CEO
Value
45
30
Unit
V
V
CES
50
30
V
CBO
50
30
V
EBO
5
5
I
C
I
CM
I
BM
I
EM
P
tot
T
j
T
stg
1
100
200
200
200
250
150
-65 ... 150
mA
mA
mW
°C
Total power dissipation,
T
S
128°C
Junction temperature
Storage temperature
Jun-16-2004

BC860BF Related Products

BC860BF BC857BF BC858BF BC859BF
Description High Speed CMOS Logic Octal Positive-Edge Triggered D-Type Flip-Flops with 3-State Outputs 20-SOIC -55 to 125 High Speed CMOS Logic Octal Positive-Edge Triggered D-Type Flip-Flops with 3-State Outputs 20-SOIC -55 to 125 PNP general purpose transistors High Speed CMOS Logic Octal Positive-Edge Triggered D-Type Flip-Flops with 3-State Outputs 20-SOIC -55 to 125
Is it Rohs certified? conform to conform to conform to conform to
Maker Infineon Infineon Infineon Infineon
package instruction SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3
Contacts 3 3 3 3
Reach Compliance Code compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99
Other features LOW NOISE LOW NOISE LOW NOISE LOW NOISE
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 45 V 45 V 30 V 30 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 220 220 220 220
JESD-30 code R-PDSO-F3 R-PDSO-F3 R-PDSO-F3 R-PDSO-F3
Humidity sensitivity level 1 1 1 1
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP PNP PNP
Maximum power dissipation(Abs) 0.25 W 0.25 W 0.25 W 0.25 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal form FLAT FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz 250 MHz
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