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DMC2041UFDB-13

Description
MOSFET 20V Complementary 12Vgs 0.6mm ESD
CategoryDiscrete semiconductor    The transistor   
File Size486KB,9 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
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DMC2041UFDB-13 Overview

MOSFET 20V Complementary 12Vgs 0.6mm ESD

DMC2041UFDB-13 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerDiodes Incorporated
package instructionSMALL OUTLINE, S-PDSO-N6
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time15 weeks
Shell connectionDRAIN
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)4.7 A
Maximum drain-source on-resistance0.04 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeS-PDSO-N6
JESD-609 codee4
Number of components2
Number of terminals6
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL AND P-CHANNEL
surface mountYES
Terminal surfaceNickel/Palladium/Gold (Ni/Pd/Au)
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
DMC2041UFDB
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
Q1
N-Channel
Q2
P-Channel
V
(BR)DSS
20V
-20V
R
DS(ON) max
40mΩ @ V
GS
= 4.5V
65mΩ @ V
GS
= 2.5V
90mΩ @ V
GS
= -4.5V
137mΩ @ V
GS
= -2.5V
I
D MAX
T
A
= +25°C
4.7A
3.7A
-3.2A
-2.6A
Features
Low On-Resistance
Low Input Capacitance
Low Profile, 0.6mm Max Height
ESD protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
U-DFN2020-6
S2
D2
D2
D1
G1
S1
Pin1
Bottom View
Gate Protection
Diode
Applications
Load Switch
Power Management Functions
Portable Power Adaptors
Case: U-DFN2020-6
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper Leadframe; Solderable per
MIL-STD-202, Method 208
e4
Terminal Connections: See Diagram Below
Weight: 0.0065 grams (Approximate)
D1
G2
D1
D2
G1
G2
ESD PROTECTED
S1
Gate Protection
Diode
S2
Q2 P-CHANNEL MOSFET
Q1 N-CHANNEL MOSFET
Internal Schematic
Ordering Information
(Note 4)
Part Number
DMC2041UFDB
-7
DMC2041UFDB
-13
Notes:
Case
U-DFN2020-6
U-DFN2020-6
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
U-DFN2020-6
D4 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
D4
Date Code Key
Year
Code
Month
Code
2014
B
Jan
1
Feb
2
2015
C
Mar
3
Apr
4
YM
2016
D
May
5
2017
E
Jun
6
Jul
7
2018
F
Aug
8
Sep
9
2019
G
Oct
O
Nov
N
2020
H
Dec
D
DMC2041UFDB
Document number: DS37420 Rev. 2 - 2
1 of 9
www.diodes.com
February 2015
© Diodes Incorporated

DMC2041UFDB-13 Related Products

DMC2041UFDB-13
Description MOSFET 20V Complementary 12Vgs 0.6mm ESD
Is it Rohs certified? conform to
Maker Diodes Incorporated
package instruction SMALL OUTLINE, S-PDSO-N6
Reach Compliance Code compliant
ECCN code EAR99
Factory Lead Time 15 weeks
Shell connection DRAIN
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 20 V
Maximum drain current (ID) 4.7 A
Maximum drain-source on-resistance 0.04 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
JESD-30 code S-PDSO-N6
JESD-609 code e4
Number of components 2
Number of terminals 6
Operating mode ENHANCEMENT MODE
Maximum operating temperature 150 °C
Minimum operating temperature -55 °C
Package body material PLASTIC/EPOXY
Package shape SQUARE
Package form SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Polarity/channel type N-CHANNEL AND P-CHANNEL
surface mount YES
Terminal surface Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal form NO LEAD
Terminal location DUAL
Maximum time at peak reflow temperature NOT SPECIFIED
transistor applications SWITCHING
Transistor component materials SILICON
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