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STP11NM65N

Description
MOSFET N-Channel 650V Pwr Mosfet
CategoryDiscrete semiconductor    The transistor   
File Size1MB,21 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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STP11NM65N Overview

MOSFET N-Channel 650V Pwr Mosfet

STP11NM65N Parametric

Parameter NameAttribute value
Brand NameSTMicroelectronics
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time98 weeks
Avalanche Energy Efficiency Rating (Eas)300 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage650 V
Maximum drain current (Abs) (ID)12 A
Maximum drain current (ID)12 A
Maximum drain-source on-resistance0.38 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)125 W
Maximum pulsed drain current (IDM)48 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
STD11NM65N, STF11NM65N,
STFI11NM65N, STP11NM65N
N-channel 650 V, 0.425
Ω
typ., 11 A MDmesh™II Power MOSFET
in DPAK, TO-220FP, I²PAKFP and TO-220 packages
Datasheet
-
production data
TAB
Features
3
1
Order codes
3
2
1
V
DSS
@
T
Jmax
R
DS(on)
max
I
D
DPAK
STD11NM65N
STF11NM65N
710 V
STFI11NM65N
STP11NM65N
< 0.455
Ω
11 A
TO-220FP
TAB
1
3
2
3
100% avalanche tested
Low input capacitance and gate charge
low gate input resistance
1
2
I²PAKFP
TO-220
Figure 1. Internal schematic diagram
Applications
Switching applications
Description
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Table 1. Device summary
Order codes
STD11NM65N
STF11NM65N
11NM65N
STFI11NM65N
STP11NM65N
I²PAKFP
TO-220
Tube
Marking
Packages
DPAK
TO-220FP
Packaging
Tape and reel
July 2013
This is information on a product in full production.
Doc ID 13476 Rev 4
1/21
www.st.com

STP11NM65N Related Products

STP11NM65N STFI11NM65N
Description MOSFET N-Channel 650V Pwr Mosfet MOSFET N-Ch 650 V 0.425 Ohm 11 A MDmesh(TM) V
Is it Rohs certified? conform to conform to
Maker STMicroelectronics STMicroelectronics
package instruction FLANGE MOUNT, R-PSFM-T3 IN-LINE, R-PSIP-T3
Reach Compliance Code not_compliant unknown
ECCN code EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 300 mJ 147 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 650 V 650 V
Maximum drain current (Abs) (ID) 12 A 11 A
Maximum drain current (ID) 12 A 11 A
Maximum drain-source on-resistance 0.38 Ω 0.455 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB TO-281
JESD-30 code R-PSFM-T3 R-PSIP-T3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 125 W 25 W
Maximum pulsed drain current (IDM) 48 A 44 A
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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