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BD3539FVM-TR

Description
Power Management Specialized - PMIC MEMORY IC REG
CategoryAnalog mixed-signal IC    Drivers and interfaces   
File Size951KB,22 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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BD3539FVM-TR Overview

Power Management Specialized - PMIC MEMORY IC REG

BD3539FVM-TR Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
Parts packaging codeMSOP
package instructionVSSOP,
Contacts8
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time9 weeks
Differential outputNO
Interface integrated circuit typeBUS TERMINATOR SUPPORT CIRCUIT
JESD-30 codeR-PDSO-G8
JESD-609 codee2
length2.9 mm
Number of functions1
Number of terminals8
Maximum operating temperature100 °C
Minimum operating temperature-30 °C
Package body materialPLASTIC/EPOXY
encapsulated codeVSSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height0.9 mm
Maximum supply voltage5.5 V
Minimum supply voltage2.7 V
Nominal supply voltage3.3 V
surface mountYES
Temperature levelOTHER
Terminal surfaceTIN COPPER
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationDUAL
Maximum time at peak reflow temperature10
width2.8 mm
Datasheet
1.0V to 5.5V, 1A 1ch
Termination Regulators for DDR-SDRAMs
BD3539FVM BD3539NUX
General Description
BD3539 is a termination regulator that complies with
JEDEC
requirements
for
DDR1-SDRAM,
DDR2-SDRAM, and DDR3-SDRAM. This linear power
supply uses a built-in N-channel MOSFET and
high-speed OP-AMPS specially designed to provide
excellent transient response. It has a sink/source
current capability of up to 1A and has a power supply
bias requirement of 3.3 V (for DDR2 and DDR3) and 5.0
V (for DDR1, DDR2, and DDR3) for driving the
N-channel MOSFET. By employing an independent
reference voltage input (VDDQ) and a feedback pin
(VTTS), this termination regulator provides excellent
output voltage accuracy and load regulation as required
by JEDEC standards. Additionally, BD3539 has a
reference power supply output (VREF)for DDR-SDRAM
or for memory controllers. Unlike the VTT output that
goes to “Hi-Z” state, the VREF output is kept
unchanged when EN input is changed to “Low”, making
this IC suitable for DDR-SDRAM under “Self Refresh”
state.
Key Specifications
Termination Input Voltage Range:
1.0V to 5.5V
VCC Input Voltage Range:
2.7V to 5.5V
VDDQ Reference Voltage Range:
1.0V to 2.75V
Output Voltage:
1/2xV
DDQ
V(Typ)
Output Current:
1.0A (Max)
High side FET ON-Resistance:
0.35Ω(Typ)
Low side FET ON-Resistance:
0.35Ω(Typ)
Standby Current:
0.5mA (Typ)
Operating Temperature Range:
-30°C to +100°C
W(Typ) x D(Typ) x H(Max)
Packages
Features
Incorporates a Push-Pull Power Supply for
Termination (VTT)
Incorporates a Reference Voltage Circuit (VREF)
Incorporates an Enabler
Incorporates an Under Voltage Lockout (UVLO)
Incorporates a Thermal Shutdown Protector (TSD)
Compatible with Dual Channel (DDR1, DDR2,
DDR3)
Usable Ceramic Capacitor at Output
MSOP8
2.90mm x 4.00mm x 0.90mm
VSON008X2030
2.00mm x 3.00mm x 0.60mm
Applications
Power Supply for DDR 1/2/3 - SDRAM
Typical Application Circuit, Block Diagram
VCC
C
2
VCC
6
5
VDDQ
VTT_IN
C
3
VDDQ
V
CC
7
VTT_IN
V
CC
Reference
Block
TSD
EN
UVLO
Thermal
Protection
Enable
EN
EN
UVLO
1
UVLO
SOFT
V
CC
TSD
EN
UVLO
TSD
EN
UVLO
3
VTT
8
VTT
C
4
TSD
V
CC
VTTS
4
2
VREF
½x
V
DDQ
C
1
GND
○Product
structure:Silicon monolithic integrated circuit
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
○This
product has no designed protection against radioactive rays
1/18
TSZ02201-0J2J0A900710-1-2
22.Jul.2015 Rev.002

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