Green
DMNH6021SK3
60V 175° N-CHANNEL ENHANCEMENT MODE MOSFET
C
Product Summary
BV
DSS
60V
R
DS(ON)
Max
23mΩ @ V
GS
= 10V
28mΩ @ V
GS
= 4.5V
I
D
Max
T
C
= +25°
C
50A
45A
Features
Description and Applications
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Power Management
Driving Solenoids
Motor Control
Rated to +175° – Ideal for High Ambient Temperature
C
Environments
100% Unclamped Inductive Switch (UIS) Test in Production
Low On-Resistance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Datasheet (DMNH6021SK3Q)
Mechanical Data
Case: TO252 (DPAK)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.33 grams (Approximate)
D
D
G
Top View
S
Equivalent Circuit
Pin Out Top View
Ordering Information
(Note 4)
Part Number
DMNH6021SK3-13
Notes:
Case
TO252 (DPAK)
Packaging
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
NH6021S
YYWW
=Manufacturer’s Marking
NH6021S = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 = 2016)
WW = Week Code (01 to 53)
DMNH6021SK3
Document number: DS37402 Rev. 1 - 2
1 of 7
www.diodes.com
June 2016
© Diodes Incorporated
DMNH6021SK3
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 7) V
GS
= 10V
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 7)
Avalanche Current, L = 0.1mH (Note 8)
Avalanche Energy, L = 0.1mH (Note 8)
T
C
= +25°
C
T
C
= +100°
C
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
I
AS
E
AS
Value
60
±20
50
35
80
40
35
64
Unit
V
V
A
A
A
A
mJ
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
Steady State
Steady State
Symbol
P
D
R
JA
P
D
R
JA
R
JC
T
J,
T
STG
Value
2.1
73
3.7
40
1.8
-55 to +175
Unit
W
°
C/W
W
°
C/W
°
C/W
°
C
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 10V)
Total Gate Charge (V
GS
= 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
60
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
13
18
0.75
1143
168
69
2.5
20.1
12.1
4.3
5.5
4.4
6.0
14.2
5.4
21.2
15.2
Max
-
1
±100
3
23
28
1.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
μA
nA
V
mΩ
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 60V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 12A
V
GS
= 4.5V, I
D
= 12A
V
GS
= 0V, I
S
= 20A
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= 30V, I
D
= 20A
V
DD
= 30V, V
GS
= 10V,
R
G
= 4.7Ω, I
D
= 10A
I
F
=20A, di/dt=100A/μs
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°
C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
DMNH6021SK3
Document number: DS37402 Rev. 1 - 2
2 of 7
www.diodes.com
June 2016
© Diodes Incorporated
DMNH6021SK3
30.0
V
GS
= 4.0V
25.0
I
D
, DRAIN CURRENT (A)
V
GS
= 4.5V
I
D
, DRAIN CURRENT (A)
V
GS
= 8V
20.0
V
GS
= 10V
V
GS
= 3.5V
25
30
V
DS
= 5V
20
15.0
15
T
J
= 175
o
C
10
T
J
= 150
o
C
T
J
= 125
o
C
5
T
J
= 85
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
10.0
5.0
V
GS
= 3.0V
0.0
0
0.5
1
1.5
2
2.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
3
1.5
2.5
3
3.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
2
4
30.00
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(mΩ)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(mΩ)
40
35
30
25
20
15
10
5
2
4
6
8
10 12 14 16 18
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
20
I
D
= 12A
25.00
20.00
V
GS
= 4.5V
15.00
10.00
V
GS
= 10V
5.00
5
15 20 25 30 35 40 45 50
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs Drain Current and
Gate Voltage
10
40
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(mΩ)
35
30
25
20
15
10
5
0
0
5
10
15
20
25
30
35
40
45
50
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs Drain Current and
Temperature
T
J
= 125
o
C
T
J
= 85
o
C
T
J
= 25
o
C
T
J
= -55
o
C
V
GS
= 10V
T
J
= 175
o
C
T
J
= 150
o
C
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
0
25 50 75 100 125 150 175
T
J
, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
June 2016
© Diodes Incorporated
V
GS
= 10V, I
D
= 12A
V
GS
= 4.5V, I
D
= 12A
-25
DMNH6021SK3
Document number: DS37402 Rev. 1 - 2
3 of 7
www.diodes.com
DMNH6021SK3
40
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(mΩ)
35
30
25
20
15
10
5
0
-50
0
25
50
75 100 125 150 175
T
J
, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
-25
V
GS
= 10V, I
D
= 12A
V
GS
= 4.5V, I
D
= 12A
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
-50
-25
0
25 50 75 100 125 150 175
T
J
, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs Junction
Temperature
I
D
= 250µA
I
D
= 1mA
50
V
GS
= 0V
43
I
S
, SOURCE CURRENT (A)
36
29
22
15
8
1
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1.5
T
A
= 175
o
C
T
A
= 150
o
C
T
A
=
125
o
C
T
A
= 85
o
C
T
A
= 25
o
C
T
A
= -55
o
C
C
J
, JUNCTION CAPACITANCE (pF)
10000
f = 1MHz
C
iss
1000
C
oss
100
C
rss
10
0
5
10 15 20 25 30 35 40 45 50 55 60
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
10
100
R
DS(ON)
Limited
8
I
D
, DRAIN CURRENT (A)
10
P
W
=1s
P
W
=100ms
P
W
=10ms
P
W
=1ms
1
T
J(Max)
= 175℃
T
C
= 25℃
Single Pulse
DUT on Infinite Heatsink
V
GS
= 10V
0.1
P
W
=100µs
P
W
=10µs
6
V
GS
(V)
4
V
DS
= 30V, I
D
= 20A
2
0
0
4
12
Q
g
(nC)
Figure 11. Gate Charge
8
16
20
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
DMNH6021SK3
Document number: DS37402 Rev. 1 - 2
4 of 7
www.diodes.com
June 2016
© Diodes Incorporated
DMNH6021SK3
1
D=0.9
r(t), TRANSIENT THERMAL RESISTANCE
D=0.5
D=0.3
0.1
D=0.1
D=0.05
D=0.7
0.01
D=0.02
D=0.01
D=0.005
D=Single Pulse
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
1
10
R
θJC
(t) = r(t) * R
θJC
R
θJC
= 1.8℃/W
Duty Cycle, D = t1/t2
DMNH6021SK3
Document number: DS37402 Rev. 1 - 2
5 of 7
www.diodes.com
June 2016
© Diodes Incorporated
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