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DMT10H015LFG-7

Description
MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W
CategoryDiscrete semiconductor    The transistor   
File Size509KB,7 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
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DMT10H015LFG-7 Overview

MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W

DMT10H015LFG-7 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerDiodes Incorporated
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time5 weeks 4 days
JESD-609 codee3
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Terminal surfaceMatte Tin (Sn)
Maximum time at peak reflow temperatureNOT SPECIFIED
Green
DMT10H015LFG
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
R
DS(ON)
max
13.5mΩ @ V
GS
= 10V
I
D
T
C
= +25°
C
42A
36A
32A
Features and Benefits
Low R
DS(ON)
– Ensures On State Losses Are Minimized
Excellent Q
gd x
R
DS (ON)
Product (FOM)
Advanced Technology for DC/DC Converters
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
Occupies Just 33% of The Board Area Occupied by SO-8
Enabling Smaller End Product
100% UIS (Avalanche) Rated
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
ADVANCE INFORMATION
100V
18mΩ @ V
GS
= 6.0V
23.5mΩ @ V
GS
= 4.5V
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Case: PowerDI 3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.008 grams (Approximate)
®
Applications
Synchronous Rectifier
Backlighting
Power Management Functions
DC-DC Converters
S
S
Pin 1
S
G
D
G
D
D
D
D
S
Top View
Equivalent Circuit
Bottom View
Ordering Information
(Note 4)
Part Number
DMT10H015LFG-7
DMT10H015LFG-13
Notes:
Case
PowerDI3333-8
PowerDI3333-8
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
S1H = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 17 = 2017)
WW = Week Code (01 to 53)
S1H
PowerDI is a registered trademark of Diodes Incorporated.
YYWW
DMT10H015LFG
Document number: DS38222 Rev. 4 - 2
1 of 7
www.diodes.com
October 2017
© Diodes Incorporated

DMT10H015LFG-7 Related Products

DMT10H015LFG-7
Description MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W
Is it Rohs certified? conform to
Maker Diodes Incorporated
Reach Compliance Code not_compliant
ECCN code EAR99
Factory Lead Time 5 weeks 4 days
JESD-609 code e3
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Terminal surface Matte Tin (Sn)
Maximum time at peak reflow temperature NOT SPECIFIED

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