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RN2110,LF(CT

Description
Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
Categorysemiconductor    Discrete semiconductor   
File Size258KB,6 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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RN2110,LF(CT Overview

Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor

RN2110,LF(CT Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerToshiba Semiconductor
Product CategoryBipolar Transistors - Pre-Biased
RoHSDetails
Transistor PolarityPNP
Typical Input Resistor4.7 kOhms
Mounting StyleSMD/SMT
Package / CaseSOT-416-3
DC Collector/Base Gain hfe Min120
Collector- Emitter Voltage VCEO Max- 50 V
Continuous Collector Current- 100 mA
Pd - Power Dissipation100 mW
PackagingCut Tape
PackagingMouseReel
PackagingReel
Emitter- Base Voltage VEBO- 5 V
Factory Pack Quantity3000
Unit Weight0.000212 oz
RN2110,RN2111
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2110, RN2111
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Built-in bias resistors
Simplified circuit design
Fewer parts and simplified manufacturing process
Complementary to RN1110, RN1111
Unit: mm
Equivalent Circuit
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
−50
−50
−5
−100
100
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
2−2H1A
Weight: 2.4 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Input resistor
RN2110
RN2111
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
f
T
C
ob
R1
Test
Circuit
Test Condition
V
CB
=
−50
V, I
E
= 0
V
EB
=
−5
V, I
C
= 0
V
CE
=
−5
V, I
C
=
−1
mA
I
C
=
−5
mA, I
B
=
−0.25
mA
V
CE
=
−10
V, I
C
=
−5
mA
V
CB
=
−10
V, I
E
= 0, f = 1 MH
z
Min
120
3.29
7
Typ.
−0.1
200
3
4.7
10
Max
−100
−100
400
−0.3
6
6.11
13
Unit
nA
nA
V
MH
z
pF
kΩ
Start of commercial production
1990-12
1
2014-03-01

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Index Files: 135  1926  1351  905  975  3  39  28  19  20 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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