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FJP13009_07

Description
12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size88KB,6 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

FJP13009_07 Overview

12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB

FJP13009_07 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current12 A
Maximum Collector-Emitter Voltage400 V
Processing package descriptionTO-220, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
terminal coatingMATTE TIN
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Transistor typeGENERAL PURPOSE POWER
Minimum DC amplification factor6
Rated crossover frequency4 MHz
FJP13009 High Voltage Fast-Switching NPN Power Transistor
March 2007
FJP13009
High Voltage Fast-Switching NPN Power Transistor
• High Voltage Capability
• High Switching Speed
• Suitable for Electronic Ballast and Switching Mode Power Supply
1
TO-220
2.Collector
3.Emitter
1.Base
Absolute Maximum Ratings*
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
T
C
= 25°C unless otherwise noted
(notes_1)
Parameter
Value
700
400
9
12
24
6
100
150
-65 ~ 150
Units
V
V
V
A
A
A
W
°C
°C
Collector Dissipation (T
C
= 25°C)
Junction Temperature
Storage Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES_1:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Package Marking and Ordering Information
Device Item
(notes_2)
FJP13009
FJP13009H2TU
FJP13009TU
Notes_2 :
1) The Affix “-H2” means the hFE classification.
2) The Suffix “-TU” means the Tube packing method, which can be on fairchildsemi website at http://www.fairchildsemi.com/packaging.
Device Marking
J13009
J130092
J13009
Package
TO-220
TO-220
TO-220
Packing Method
Bulk
TUBE
TUBE
Qty(pcs)
1,200
1,000
1,000
©2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FJP13009 Rev. B

FJP13009_07 Related Products

FJP13009_07 J130092 J13009 FJP13009TU
Description 12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB 12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB 12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB 12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
Number of terminals 3 3 3 3
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
Number of components 1 1 1 1
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Transistor polarity NPN NPN NPN -
Maximum collector current 12 A 12 A 12 A -
Maximum Collector-Emitter Voltage 400 V 400 V 400 V -
Processing package description TO-220, 3 PIN TO-220, 3 PIN TO-220, 3 PIN -
Lead-free Yes Yes Yes -
EU RoHS regulations Yes Yes Yes -
state ACTIVE ACTIVE ACTIVE -
packaging shape RECTANGULAR RECTANGULAR RECTANGULAR -
Package Size FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT -
terminal coating MATTE TIN MATTE TIN MATTE TIN -
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
structure SINGLE SINGLE SINGLE -
Transistor type GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER -
Minimum DC amplification factor 6 6 6 -
Rated crossover frequency 4 MHz 4 MHz 4 MHz -
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