FJP13009 High Voltage Fast-Switching NPN Power Transistor
March 2007
FJP13009
High Voltage Fast-Switching NPN Power Transistor
• High Voltage Capability
• High Switching Speed
• Suitable for Electronic Ballast and Switching Mode Power Supply
1
TO-220
2.Collector
3.Emitter
1.Base
Absolute Maximum Ratings*
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
T
C
= 25°C unless otherwise noted
(notes_1)
Parameter
Value
700
400
9
12
24
6
100
150
-65 ~ 150
Units
V
V
V
A
A
A
W
°C
°C
Collector Dissipation (T
C
= 25°C)
Junction Temperature
Storage Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES_1:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Package Marking and Ordering Information
Device Item
(notes_2)
FJP13009
FJP13009H2TU
FJP13009TU
Notes_2 :
1) The Affix “-H2” means the hFE classification.
2) The Suffix “-TU” means the Tube packing method, which can be on fairchildsemi website at http://www.fairchildsemi.com/packaging.
Device Marking
J13009
J130092
J13009
Package
TO-220
TO-220
TO-220
Packing Method
Bulk
TUBE
TUBE
Qty(pcs)
1,200
1,000
1,000
©2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FJP13009 Rev. B
FJP13009 High Voltage Fast-Switching NPN Power Transistor
Electrical Characteristics
Symbol
V
CEO
(sus)
I
EBO
h
FE
V
CE
(sat)
T
C
= 25°C unless otherwise noted
Parameter
Collector-Emitter Sustaining Voltage
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
Conditions
I
C
= 10mA, I
B
= 0
V
EB
= 9V, I
C
= 0
V
CE
= 5V, I
C
= 5A (h
FE1
)
V
CE
= 5V, I
C
= 8A
I
C
= 5A, I
B
= 1A
I
C
= 8A, I
B
= 1.6A
I
C
= 12A, I
B
= 3A
I
C
= 5A, I
B
= 1A
I
C
= 8A, I
B
= 1.6A
V
CB
= 10V, f = 0.1MHz
V
CE
= 10V, I
C
= 0.5A
V
CC
= 125V, I
C
= 8A
I
B1
= - I
B2
= 1.6A, R
L
= 15,6Ω
Min.
400
Typ.
Max
1
Units
V
mA
8
6
40
30
1
1.5
3
1.2
1.6
180
V
V
V
V
V
pF
MHz
1.1
3
0.7
µs
µs
µs
V
BE
(sat)
C
ob
f
T
t
ON
t
STG
t
F
* Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
4
* Pulse Test: PW
≤
300µs, Duty Cycle
≤
2%
h
FE
Classification
Classification
h
FE1
H1
8 ~ 17
H2
15 ~ 28
2
FJP13009 Rev. B
www.fairchildsemi.com
FJP13009 High Voltage Fast-Switching NPN Power Transistor
Typical Performance Characteristics
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
100
10
V
CE
= 5V
I
C
= 3 I
B
h
FE
, DC CURRENT GAIN
1
V
BE
(sat)
10
0.1
V
CE
(sat)
1
0.1
1
10
100
0.01
0.1
1
10
100
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
10000
V
CC
=125V
I
C
=5I
B
C
ob
[pF], CAPACITANCE
t
R
, t
D
[ns], TURN ON TIME
100
1000
t
R
10
100
t
D
, V
BE
(off)=5V
1
0.1
1
10
100
1000
10
0.1
1
10
100
V
CB
[V], COLLECTOR BASE VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 3. Collector Output Capacitance
Figure 4. Turn On Time
10000
100
t
STG
, t
F
[ns], TURN OFF TIME
V
CC
=125V
I
C
=5I
B
µ
s
10
s
I
C
[A], COLLECTOR CURRENT
0
µ
10
10
s
1m
t
STG
DC
1000
1
0.1
t
F
100
0.1
1
10
100
0.01
1
10
100
1000
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Turn Off Time
Figure 6. Forward Bias Safe Operating Area
3
FJP13009 Rev. B
www.fairchildsemi.com
FJP13009 High Voltage Fast-Switching NPN Power Transistor
Typical Performance Characteristics
(Continued)
100
120
I
C
[A], COLLECTOR CURRENT
10
P
C
[W], POWER DISSIPATION
Vcc=50V,
I
B1
=1A, I
B2
= -1A
L = 1mH
100
80
1
60
40
0.1
20
0.01
10
0
100
1000
10000
0
25
50
o
75
100
125
150
175
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 7. Reverse Bias Safe Operating Area
Figure 8. Power Derating
4
FJP13009 Rev. B
www.fairchildsemi.com
FJP13009 High Voltage Fast-Switching NPN Power Transistor
Mechanical Dimensions
TO-220
9.90
±0.20
1.30
±0.10
2.80
±0.10
4.50
±0.20
(8.70)
ø3.60
±0.10
(1.70)
1.30
–0.05
+0.10
9.20
±0.20
(1.46)
13.08
±0.20
(1.00)
(3.00)
15.90
±0.20
1.27
±0.10
1.52
±0.10
0.80
±0.10
2.54TYP
[2.54
±0.20
]
2.54TYP
[2.54
±0.20
]
10.08
±0.30
18.95MAX.
(3.70)
)
(45
°
0.50
–0.05
+0.10
2.40
±0.20
10.00
±0.20
Dimensions in Millimeters
5
FJP13009 Rev. B
www.fairchildsemi.com
LED Zone
京公网安备 11010802033920号
EEWORLD
