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BCP69T1

Description
Bipolar Transistors - BJT 1A 20V PNP
CategoryDiscrete semiconductor    The transistor   
File Size118KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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Bipolar Transistors - BJT 1A 20V PNP

BCP69T1 Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Contains lead
MakerON Semiconductor
Parts packaging codeTO-261AA
package instructionCASE 318E-04, TO-261, 4 PIN
Contacts4
Manufacturer packaging code0.0318
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time1 week
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JEDEC-95 codeTO-261AA
JESD-30 codeR-PDSO-G4
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals4
Maximum operating temperature140 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)245
Polarity/channel typePNP
Maximum power dissipation(Abs)1.5 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
Transistor component materialsSILICON
Nominal transition frequency (fT)60 MHz
BCP69T1G, NSVBCP69T1G
PNP Silicon
Epitaxial Transistor
This PNP Silicon Epitaxial Transistor is designed for use in low
voltage, high current applications. The device is housed in the
SOT−223 package, which is designed for medium power surface
mount applications.
Features
http://onsemi.com
High Current: I
C
=
−1.0
A
The SOT−223 Package Can Be Soldered Using Wave or Reflow.
SOT−223 package ensures level mounting, resulting in improved
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering, eliminating
the possibility of damage to the die.
NPN Complement is BCP68
AEC−Q101 Qualified and PPAP Capable
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MEDIUM POWER
PNP SILICON
HIGH CURRENT
TRANSISTOR
SURFACE MOUNT
COLLECTOR 2,4
BASE
1
EMITTER 3
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Total Power Dissipation @ T
A
= 25°C (Note 1)
Derate above 25°C
Operating and Storage Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
T
J
, T
stg
Value
−20
−25
−5.0
−1.0
1.5
12
−65
to
150
Unit
Vdc
Vdc
Vdc
Adc
W
mW/°C
°C
1
2
4
3
MARKING
DIAGRAM
AYW
CEG
G
SOT−223 (TO−261)
CASE 318E
STYLE 1
CE
A
Y
W
G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
Junction−to−Ambient
(Surface Mounted)
Lead Temperature for Soldering,
0.0625 in from case
Time in Solder Bath
Symbol
R
qJA
T
L
Max
83.3
260
10
Unit
°C/W
°C
s
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(*Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BCP69T1G
NSVBCP69T1G
Package
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
Shipping
1000 / Tape & Reel
1000 / Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2011
November, 2011
Rev. 11
1
Publication Order Number:
BCP69T1/D
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