MMBTA63LT1G,
MMBTA64LT1G,
SMMBTA64LT1G
Darlington Transistors
PNP Silicon
www.onsemi.com
Features
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Symbol
V
CES
V
CBO
V
EBO
I
C
Value
−30
−30
−10
−500
Unit
Vdc
Vdc
Vdc
mAdc
BASE
1
EMITTER 2
SOT−23 (TO−236)
CASE 318
STYLE 6
COLLECTOR 3
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
225
1.8
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
417
−55 to +150
mW
mW/°C
°C/W
°C
M
G
556
mW
mW/°C
°C/W
2x
Max
Unit
1
= Device Code
x = U for MMBTA63LT1G
x = V for MMBTA64LT1G
SMMBTA64LT1G
= Date Code*
= Pb−Free Package
2x M
G
G
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ORDERING INFORMATION
Device
MMBTA63LT1G
MMBTA64LT1G
SMMBTA64LT1G
Package
Shipping
†
SOT−23 3,000 / Tape & Reel
(Pb−Free)
SOT−23 3,000 / Tape & Reel
(Pb−Free)
SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 1994
1
October, 2016 − Rev. 6
Publication Order Number:
MMBTA63LT1/D
MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I
C
= −100
mAdc)
Collector Cutoff Current
(V
CB
= −30 Vdc)
Emitter Cutoff Current
(V
EB
= −10 Vdc)
ON CHARACTERISTICS
DC Current Gain (Note 3)
(I
C
= −10 mAdc, V
CE
= −5.0 Vdc)
MMBTA63
(I
C
= −10 mAdc, V
CE
= −5.0 Vdc)
MMBTA64, SMMBTA64
(I
C
= −100 mAdc, V
CE
= −5.0 Vdc)
MMBTA63
(I
C
= −100 mAdc, V
CE
= −5.0 Vdc)
MMBTA64, SMMBTA64
Collector −Emitter Saturation Voltage
(I
C
= −100 mAdc, I
B
= −0.1 mAdc)
Base − Emitter On Voltage
(I
C
= −100 mAdc, V
CE
= −5.0 Vdc)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(I
C
= −10 mAdc, V
CE
= −5.0 Vdc, f = 100 MHz)
f
T
125
−
MHz
h
FE
5,000
10,000
10,000
20,000
V
CE(sat)
−
V
BE(on)
−
−2.0
−1.5
Vdc
−
−
−
−
Vdc
−
V
(BR)CEO
−30
I
CBO
−
I
EBO
−
−100
−100
nAdc
−
nAdc
Vdc
Symbol
Min
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2.0%.
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2
MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G
200
hFE , DC CURRENT GAIN (X1.0 K)
100
70
50
30
20
10
7.0
5.0
3.0
2.0
-0.3
-10 V
25°C
V
CE
= -2.0 V
-5.0 V
T
A
= 125°C
-55°C
-0.5
-0.7
-1.0
-2.0
-3.0
-5.0
-7.0
-10
-20
-30
-50
-70
-100
-200
-300
I
C
, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
-2.0
T
A
= 25°C
-1.6
V, VOLTAGE (VOLTS)
V
BE(sat)
@ I
C
/I
B
= 100
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
-2.0
T
A
= 25°C
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.1-0.2 -0.5 -1 -2
-5 -10 -20 -50 -100-200-500 -1K-2K -5K-10K
I
B
, BASE CURRENT (mA)
I
C
= -10 mA -50 mA -100 mA -175 mA
-300 mA
-1.2
V
BE(on)
@ V
CE
= -5.0 V
-0.8
V
CE(sat)
@ I
C
/I
B
= 1000
I
C
/I
B
= 100
-0.4
0
-0.3 -0.5
-1.0
-2 -3 -5
-10 -20 -30 -50
I
C
, COLLECTOR CURRENT (mA)
-100 -200 -300
Figure 3. “On” Voltage
Figure 2. Collector Saturation Region
10
|h FE |, HIGH FREQUENCY CURRENT GAIN
V
CE
= -5.0 V
f = 100 MHz
T
A
= 25°C
1
I
C
, COLLECTOR CURRENT (A)
1 ms
10 ms
4.0
3.0
2.0
1.0
0.4
0.2
0.1
100 ms
1s
0.01
Single Pulse Test
@ T
A
= 25°C
0.001
0.01
Thermal Limit
0.1
-1.0 -2.0
-5.0
-10
-20
-50
-100 -200
-500
-1K
I
C
, COLLECTOR CURRENT (mA)
1.0
10
0.1
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
100
Figure 4. High Frequency Current Gain
Figure 5. Safe Operating Area
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3
MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
0.25
3
E
1
2
HE
L
3X
b
T
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
H
E
T
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10
°
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
e
TOP VIEW
L1
VIEW C
A
A1
SIDE VIEW
SEE VIEW C
c
END VIEW
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
RECOMMENDED
SOLDERING FOOTPRINT*
2.90
3X
0.90
3X
0.80
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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4
MMBTA63LT1/D
Embedded System
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