IS43LD16640A-3BL-TR datasheet, PDF

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IS43LD16640A-3BL-TR: DescriptionDRAM 1G 1.2/1.8V 64Mx16 333MHz 134ball BGA; Categorystorage; File Size6MB，143 Pages; ManufacturerISSI(Integrated Silicon Solution Inc.); Websitehttp://www.issi.com/; Environmental Compliance

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IS43LD16640A-3BL-TR Overview

DRAM 1G 1.2/1.8V 64Mx16 333MHz 134ball BGA

IS43LD16640A-3BL-TR Parametric

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	ISSI(Integrated Silicon Solution Inc.)
Product Category	DRAM
RoHS	Details
Type	SDRAM Mobile - LPDDR2
Data Bus Width	16 bit
Organization	64 M x 16
Package / Case	BGA-134
Memory Size	1 Gbit
Maximum Clock Frequency	333 MHz
Access Time	3 ns
Supply Voltage - Max	1.95 V
Supply Voltage - Min	1.7 V
Supply Current - Max	40 mA
Minimum Operating Temperature	0 C
Maximum Operating Temperature	+ 85 C
Packaging	Cut Tape
Packaging	Reel
Mounting Style	SMD/SMT
Operating Supply Voltage	1.8 V
Factory Pack Quantity	2000

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IS43/46LD16640A

IS43/46LD32320A

1Gb (x16, x32) Mobile LpddR2 s4 sdRAM

FeAtURes

•

Low-voltage Core and I/O Power Supplies

VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V,

VDD1 = 1.70-1.95V

•

High Speed Un-terminated Logic(HSUL_12) I/O

Interface

•

Clock Frequency Range : 10MHz to 400MHz

(data rate range : 20Mbps to 800 Mbps per I/O)

•

Four-bit Pre-fetch DDR Architecture

•

Multiplexed, double data rate, command/ad-

dress inputs

•

Eight internal banks for concurrent operation

•

Bidirectional/differential data strobe per byte of

data (DQS/DQS#)

•

Programmable Read/Write latencies(RL/WL)

and burst lengths(4,8 or 16)

•

Per-bank refresh for concurrent operation

•

ZQ Calibration

•

On-chip temperature sensor to control self re-

fresh rate

•

Partial –array self refresh(PASR) – Bank & Seg-

ment masking

•

Deep power-down mode(DPD)

•

Operation Temperature

Commercial (T

= 0°C to 85°C)

Industrial (T

= -40°C to 85°C)

Automotive, A1 (T

= -40°C to 85°C)

Automotive, A2 (T

= -40°C to 105°C)

AUGUst 2014

descRiption

The IS43/46LD16640A/32320A is 1,073,741,824 bits

CMOS Mobile Double Data Rate Synchronous DRAMs

organized as 8 banks (S4). The deviceis organized as 8

banks of 8Meg words of 16bits or 4Meg words of 32bits.

This product uses a double-data-rate architecture to

achieve high-speed operation. The double data rate

architecture is essentially a 4N prefetch architecture

with an interface designed to transfer two data words

per clock cycle at the I/O pins. This product offers fully

synchronous operations referenced to both rising and

falling edges of the clock. The data paths are internally

pipelined and 4n bits prefetched to achieve very high

bandwidth.

AddRess tABLe

Parameter

Row Addresses

Column Addresses

Bank Addresses

Refresh Count

32Mx32

R0-R12

C0-C8

BA0-BA2

64Mx16

R0-R12

C0-C9

BA0-BA2

keY tiMinG pARAMeteRs

Speed

Grade

-25

-3

Data

Rate

(Mb/s)

800

667

Write

Read tRCD/

Latency Latency tRP

Typical

options

•

Configuration:

− 64Mx16 (8M x 16 x 8 banks)

− 32Mx32 (4M x 32 x 8 banks)

Package:

− 134-ball BGA for x16 / x32

− 168-ball PoP BGA for x32

Note:

Other clock frequencies/data rates supported; please

refer to AC timing tables.

liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on

any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be ex-

pected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon

Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. — www.issi.com

Rev. A

8/6/2014

IS43LD16640A-3BL-TR Related Products

	IS43LD16640A-3BL-TR	IS43LD32320A-25BLI-TR	IS43LD32320A-25BL	IS43LD16640A-3BLI-TR	IS43LD32320A-25BL-TR	IS43LD32320A-3BL-TR	IS43LD16640A-3BL	IS43LD16640A-25BL	IS43LD32320A-3BLI-TR
Description	DRAM 1G 1.2/1.8V 64Mx16 333MHz 134ball BGA	DRAM 1G 1.2/1.8V 32Mx32 400MHz 134ball BGA	DRAM 1G 1.2/1.8V 32Mx32 400MHz 134ball BGA	DRAM 1G 1.2/1.8V 64Mx16 333MHz 134ball BGA	DRAM 1G 1.2/1.8V 32Mx32 400MHz 134ball BGA	DRAM 1G 1.2/1.8V 32Mx32 333MHz 134ball BGA	DRAM 1G 1.2/1.8V 64Mx16 333MHz 134ball BGA	DRAM 1G 1.2/1.8V 64Mx16 400MHz 134ball BGA	DRAM 1G 1.2/1.8V 32Mx32 333MHz 134ball BGA
Product Attribute	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value
Manufacturer	ISSI(Integrated Silicon Solution Inc.)	ISSI(Integrated Silicon Solution Inc.)	ISSI(Integrated Silicon Solution Inc.)	ISSI(Integrated Silicon Solution Inc.)	ISSI(Integrated Silicon Solution Inc.)	ISSI(Integrated Silicon Solution Inc.)	ISSI(Integrated Silicon Solution Inc.)	ISSI(Integrated Silicon Solution Inc.)	ISSI(Integrated Silicon Solution Inc.)
Product Category	DRAM	DRAM	DRAM	DRAM	DRAM	DRAM	DRAM	DRAM	DRAM
RoHS	Details	Details	Details	Details	Details	Details	Details	Details	Details
Type	SDRAM Mobile - LPDDR2	SDRAM Mobile - LPDDR2	SDRAM Mobile - LPDDR2	SDRAM Mobile - LPDDR2	SDRAM Mobile - LPDDR2	SDRAM Mobile - LPDDR2	SDRAM Mobile - LPDDR2	SDRAM Mobile - LPDDR2	SDRAM Mobile - LPDDR2
Data Bus Width	16 bit	32 bit	32 bit	16 bit	32 bit	32 bit	16 bit	16 bit	32 bit
Organization	64 M x 16	32 M x 32	32 M x 32	64 M x 16	32 M x 32	32 M x 32	64 M x 16	64 M x 16	32 M x 32
Package / Case	BGA-134	BGA-134	BGA-134	BGA-134	BGA-134	BGA-134	BGA-134	BGA-134	BGA-134
Memory Size	1 Gbit	1 Gbit	1 Gbit	1 Gbit	1 Gbit	1 Gbit	1 Gbit	1 Gbit	1 Gbit
Maximum Clock Frequency	333 MHz	400 MHz	400 MHz	333 MHz	400 MHz	333 MHz	333 MHz	400 MHz	333 MHz
Access Time	3 ns	2.5 ns	2.5 ns	3 ns	2.5 ns	3 ns	3 ns	2.5 ns	3 ns
Supply Voltage - Max	1.95 V	1.95 V	1.95 V	1.95 V	1.95 V	1.95 V	1.95 V	1.95 V	1.95 V
Supply Voltage - Min	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V
Supply Current - Max	40 mA	40 mA	40 mA	40 mA	40 mA	40 mA	40 mA	40 mA	40 mA
Minimum Operating Temperature	0 C	0 C	0 C	- 40 C	0 C	0 C	0 C	0 C	0 C
Maximum Operating Temperature	+ 85 C	+ 85 C	+ 85 C	+ 85 C	+ 85 C	+ 85 C	+ 85 C	+ 85 C	+ 85 C
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT
Operating Supply Voltage	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
Factory Pack Quantity	2000	2000	171	2000	2000	2000	171	171	2000
Packaging	Reel	Reel	-	Reel	Reel	Reel	-	-	Reel

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