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BCR 162 E6327

Description
Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size808KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

BCR 162 E6327 Overview

Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR

BCR 162 E6327 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryBipolar Transistors - Pre-Biased
RoHSDetails
ConfigurationSingle
Transistor PolarityPNP
Typical Input Resistor4.7 kOhms
Typical Resistor Ratio1
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
DC Collector/Base Gain hfe Min20
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current100 mA
Peak DC Collector Current100 mA
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Height1 mm
Length2.9 mm
Width1.3 mm
Factory Pack Quantity3000
Unit Weight0.000282 oz
BCR162
PNP Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor
(R
1
= 4.7kΩ ,
R
2
= 4.7kΩ )
Pb-free (RoHS compliant) package
Qualified according AEC Q101
BCR162
C
3
R
1
R
2
1
B
2
E
EHA07183
Type
BCR162
Marking
WUs
1=B
Pin Configuration
2=E
2=C
-
-
-
Package
SOT23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
Collector current
Total power dissipation-
T
S
102°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
T
j
T
stg
Symbol
R
thJS
150
-65 ... 150
Value
240
Unit
K/W
°C
Symbol
V
CEO
V
CBO
V
i(fwd)
V
i(rev)
I
C
P
tot
Value
50
50
30
10
100
200
mA
mW
Unit
V
1
2011-08-29

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