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BSS123
June 2003
BSS123
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect
transistors are produced using Fairchild’s proprietary,
high cell density, DMOS technology. These products
have been designed to minimize on-state resistance
while provide rugged, reliable, and fast switching
performance.These products are particularly suited for
low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
t
rr
Q
rr
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
GS
= 0 V,
I
F
= 0.17 A,
d
iF
/d
t
= 100 A/µs
I
S
= 0.34 A
(Note 2)
0.8
11
3
0.17
1.3
A
V
nS
nC
NOTE:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 350°C/W when mounted on a
minimum pad..
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
BSS123 Rev G(W)
BSS123
Typical Characteristics
1
V
GS
= 10V
6.0V
0.8
I
D
, DRAIN CURRENT (A)
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
3.5V
3.0V
2.5V
1.5
1.4
V
GS
= 2.5V
1.3
1.2
1.1
1
0.9
5
4.5V
0.6
0.4
3.0V
3.5V
4.5V
6.0V
10V
0.2
2.0V
0
0
1
2
3
4
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
3.4
R
DS(ON)
, ON-RESISTANCE (OHM)
2.2
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
-25
0
25
50
75
100
o
I
D
= 170mA
V
GS
= 10V
I
D
= 0.08A
3
2.6
2.2
1.8
1.4
T
A
= 25
o
C
1
0
2
4
6
8
10
T
A
= 125
o
C
125
150
T
J
, JUNCTION TEMPERATURE ( C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
1
V
DS
= 10V
I
D
, DRAIN CURRENT (A)
0.8
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
1
I
S
, REVERSE DRAIN CURRENT (A)
V
GS
= 0V
0.1
T
A
= 125
o
C
25
o
C
0.6
0.01
-55
o
C
0.4
T
A
= 125 C
0.2
25
o
C
-55
o
C
0
1
1.5
2
2.5
3
V
GS
, GATE TO SOURCE VOLTAGE (V)
o
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
BSS123 Rev G(W)
BSS123
Typical Characteristics
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 0.17A
V
DS
= 30V
50V
100
f = 1 MHz
V
GS
= 0 V
80
CAPACITANCE (pF)
8
70V
C
ISS
6
60
4
40
2
20
C
OSS
C
RSS
0
0
0.4
0.8
1.2
1.6
2
Q
g
, GATE CHARGE (nC)
0
0
20
40
60
80
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
1
R
DS(ON)
LIMIT
1ms
I
D
, DRAIN CURRENT (A)
10ms
100ms
1s
10s
DC
0.01
V
GS
= 10V
SINGLE PULSE
R
θJA
= 350
o
C/W
T
A
= 25 C
0.001
1
10
100
1000
V
DS
, DRAIN-SOURCE VOLTAGE (V)
o
Figure 8. Capacitance Characteristics.
5
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
θJA
= 350°C/W
T
A
= 25°C
100µs
4
0.1
3
2
1
0
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1
D = 0.5
0.2
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 350 C/W
P(pk)
t
1
t
2
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
o
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1a.
Transient thermal response will change depending on the circuit board design.
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