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BAT1804E6327HTSA1

Description
Schottky Diodes & Rectifiers RF DIODES
CategoryDiscrete semiconductor    diode   
File Size806KB,5 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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Schottky Diodes & Rectifiers RF DIODES

BAT1804E6327HTSA1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time4 weeks
applicationSWITCHING
Minimum breakdown voltage35 V
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Maximum diode capacitance1 pF
Diode component materialsSILICON
Maximum diode forward resistance0.7 Ω
Diode typePIN DIODE
frequency bandVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Minority carrier nominal lifetime0.12 µs
Humidity sensitivity level1
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
surface mountYES
technologyPOSITIVE-INTRINSIC-NEGATIVE
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
BAT18...
Silicon RF Switching Diode
Low-loss VHF / UHF switch above 10 MHz
PIN diode with low forward resistance
Pb-free (RoHS compliant) package
BAT18-04
!
BAT18-05
!
, 
,
, 
,


Type
BAT18-04
BAT18-05
Package
SOT23
SOT23
Configuration
series
common cathode
L
S
(nH)
1.8
1.8
Marking
AUs
ASs
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Forward current
Junction temperature
Operating temperature range
Storage temperature
Thermal Resistance
Parameter
Symbol
R
thJS
Value
290
Unit
Symbol
V
R
I
F
T
j
T
op
T
stg
Value
35
100
150
-55 ... 125
-55 ... 150
Unit
V
mA
°C
Junction - soldering point
1)
BAT18-04, BAT18-05
1
For
K/W
calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
2011-06-14

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Description Schottky Diodes & Rectifiers RF DIODES pin diodes silicon RF switching diode DIODE ARRAY GP 35V 100MA SOT23 Pin Diode, 35V V(BR), Silicon, ROHS COMPLIANT PACKAGE-3 Pin Diode, 35V V(BR), Silicon, ROHS COMPLIANT PACKAGE-3
package instruction R-PDSO-G3 - - R-PDSO-G3 R-PDSO-G3
Reach Compliance Code compliant - - compliant unknown
ECCN code EAR99 - - EAR99 EAR99
application SWITCHING - - SWITCHING SWITCHING
Minimum breakdown voltage 35 V - - 35 V 35 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS - - COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Maximum diode capacitance 1 pF - - 1 pF 1 pF
Diode component materials SILICON - - SILICON SILICON
Maximum diode forward resistance 0.7 Ω - - 0.7 Ω 0.7 Ω
Diode type PIN DIODE - standard PIN DIODE PIN DIODE
frequency band VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY - - VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 code R-PDSO-G3 - - R-PDSO-G3 R-PDSO-G3
Minority carrier nominal lifetime 0.12 µs - - 0.12 µs 0.12 µs
Number of components 2 - - 2 2
Number of terminals 3 - - 3 3
Maximum operating temperature 150 °C - - 150 °C 150 °C
Package body material PLASTIC/EPOXY - - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - - RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE - - SMALL OUTLINE SMALL OUTLINE
surface mount YES - - YES YES
technology POSITIVE-INTRINSIC-NEGATIVE - - POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE
Terminal form GULL WING - - GULL WING GULL WING
Terminal location DUAL - - DUAL DUAL
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